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PSMN008-75P,127

P1-P3P4-P6P7-P9P10-P12P13-P13
PSMN008-75P_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 10 December 2009 3 of 12
NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
40
80
120
0 50 100 150 200
T
mb
(°C)
I
der
(%)
03am86
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
03am79
V
DS
(V)
1 10
3
10
2
10
10
2
10
10
3
I
D
(A)
1
Limit R
DSon
= V
DS
/I
D
DC
100 μs
10 ms
1 ms
t
p
= 10 μs
PSMN008-75P_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 10 December 2009 4 of 12
NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
see Figure 4 - - 0.65 K/W
R
th(j-a)
thermal resistance from junction to ambient vertical in still air - 60 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03am78
t
p
(s)
10
-4
110
−1
10
−3
10
−2
10
−1
1
Z
th(j-mb)
(K/W)
10
−2
t
p
t
p
T
P
t
T
δ =
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
PSMN008-75P_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 10 December 2009 5 of 12
NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 75 90 - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 8
--4.4V
I
D
=1mA; V
DS
= V
GS
; T
j
=175°C;
see Figure 8
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 8
234V
I
DSS
drain leakage current V
DS
=75V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=75V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 4 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 4 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 175 °C;
see Figure 9
and 10
--20mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 9 and 10
-6.58.5mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=75A; V
DS
=60V; V
GS
=10V;
T
j
=25°C; see Figure 11
- 122.8 - nC
Q
GS
gate-source charge - 21 - nC
Q
GD
gate-drain charge - 50 - nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 12
- 5260 - pF
C
oss
output capacitance - 525 - pF
C
rss
reverse transfer
capacitance
- 420 - pF
t
d(on)
turn-on delay time V
DS
=38V; R
L
=1.5Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-18-ns
t
r
rise time - 55 - ns
t
d(off)
turn-off delay time - 88 - ns
t
f
fall time - 80 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.84 1.2 V
t
rr
reverse recovery time I
S
=5A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V; T
j
=25°C
-70-ns
Q
r
recovered charge - 100 - nC
P1-P3P4-P6P7-P9P10-P12P13-P13

PSMN008-75P,127

Mfr. #:
Buy PSMN008-75P,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 75V 75A TO220AB
Lifecycle:
New from this manufacturer.
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