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PSMN008-75P,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PSMN008-75P_4
© NXP B.V
. 2009. All rights reserv
ed.
Product data sheet
Rev
. 04 — 10 December 2009
6 of 12
NXP Semiconductors
PSMN008-75P
N-channel T
renchMOS SiliconMAX st
andard level FET
Fig 5.
Output characteristic
s: drain current as
a
function of
drain-source
voltage;
typical val
ues
Fig 6.
Transfer characteristics: drain curren
t as a
function of gate-source vo
ltage; typical values
Fig 7.
Sub-threshold drain curre
nt as a function of
gate-source voltage
Fig 8.
Gate-source threshold voltag
e as a function of
junction tempe
rature
03am80
0
25
50
75
100
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
T
j
= 25
°
C
V
GS
= 4.1
V
10 V
4.5 V
5 V
5.5 V
6 V
4.7 V
03am82
0
25
50
75
100
02
46
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25
°
C
175
°
C
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
PSMN008-75P_4
© NXP B.V
. 2009. All rights reserv
ed.
Product data sheet
Rev
. 04 — 10 December 2009
7 of 12
NXP Semiconductors
PSMN008-75P
N-channel T
renchMOS SiliconMAX st
andard level FET
Fig 9.
Dr
ain-source
on-state re
sistance as
a function
of drain current; typical values
Fig 10.
Normalized drain-source on-state resistance
factor as a functio
n of junction temperature
Fig 11.
Gate-source voltag
e as a function of gate
charge; typical values
Fig
12.
Input, output and reverse
transfer capacitances
as a function of
drain-source voltage
; typical
values
03am81
0
5
10
15
20
25
0
25
50
75
100
I
D
(A)
R
DSon
(m
Ω
)
V
GS
= 5
V
T
j
= 25
°
C
10 V
5.5 V
03ac63
0
1
2
3
-60
0
60
120
180
T
j
(
°
C)
a
0
2
4
6
8
10
0
50
100
150
Q
G
(nC)
V
GS
(V)
I
D
= 75 A
T
j
= 25
°
C
V
DD
= 60 V
03am85
03am84
10
2
10
3
10
4
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
PSMN008-75P_4
© NXP B.V
. 2009. All rights reserv
ed.
Product data sheet
Rev
. 04 — 10 December 2009
8 of 12
NXP Semiconductors
PSMN008-75P
N-channel T
renchMOS SiliconMAX st
andard level FET
Fig 13.
Source current as a functio
n of source-drain voltage; typica
l values
03am83
0
25
50
75
100
0
0.5
1
1.5
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
175
°
C
V
GS
= 0
V
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PSMN008-75P,127
Mfr. #:
Buy PSMN008-75P,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 75V 75A TO220AB
Lifecycle:
New from this manufacturer.
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