JANSF2N2222AL Datasheet JANSR2N2222AUB, JANSF2N2221AUB, JANSF2N2222AL | P1-P3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

T4-LDS-0042 Rev. 3 (100247) Page 1 of 7

DEVICES LEVELS

2N2221A 2N2222A

JANSM – 3K Rads (Si)

2N2221AL 2N2222AL

JANSD – 10K Rads (Si)

2N2221AUA 2N2222AUA

JANSP – 30K Rads (Si)

2N2221AUB 2N2222AUB

JANSL – 50K Rads (Si)

2N2221AUBC 2N2222AUBC

JANSR – 100K Rads (Si)

JANSF – 300K Rads (Si)

JANSG – 500K Rads (Si)

JANSH – 1MEG Rads (Si)

ABSOLUTE MAXIMUM RATINGS (T

C

= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit

Collector-Emitter Voltage V

CEO

50 Vdc

Collector-Base Voltage V

CBO

75 Vdc

Emitter-Base Voltage V

EBO

6.0 Vdc

Collector Current I

C

800 mAdc

Total Power Dissipation @ T

A

= +25°C

2N2221A, L

2N2221AUA

2N2221AUB, UBC

2N2222A, L

2N2222AUA

2N2222AUB, UBC

P

T

0.5

0.65

0.50

W

Operating & Storage Junction Temperature Range T

op

, T

stg

-65 to +200 °C

THERMAL CHARACTERISTICS

Parameters / Test Conditions Symbol Max. Unit

Thermal Resistance, Junction-to-Ambient

2N2221A, L

2N2221AUA

2N2221AUB, UBC

2N2222A, L

2N2222AUA

2N2222AUB, UBC

R

θJA

325

210

325

°C/W

1. Derate linearly 3.08 mW/°C above T

A

> +37.5°C

2. Derate linearly 4.76 mW/°C above T

A

> +63.5°C

TO-18 (TO-206AA)

2N2221A, 2N2222A

4 PIN

2N2221AUA, 2N2222AUA

3 PIN

2N2221AUB, 2N2222AUB

2N2221AUBC, 2N2222AUBC

(UBC = Ceramic Lid Version)

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0042 Rev. 3 (100247) Page 2 of 7

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 10mAdc

V

(BR)CEO

50 Vdc

Collector-Base Cutoff Current

V

CB

= 75Vdc

V

CB

= 60Vdc

I

CBO

10

μAdc

ηAdc

Emitter-Base Cutoff Current

V

EB

= 6.0Vdc

V

EB

= 4.0Vdc

I

EBO

10

μAdc

ηAdc

Collector-Emitter Cutoff Current

V

CE

= 50Vdc

I

CES

50

ηAdc

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

I

C

= 0.1mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

30

50

I

C

= 1.0mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

35

75

150

325

I

C

= 10mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

40

100

I

C

= 150mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

40

100

120

300

I

C

= 500mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

h

FE

20

30

Collector-Emitter Saturation Voltage

I

C

= 150mAdc, I

B

= 15mAdc

I

C

= 500mAdc, I

B

= 50mAdc

V

CE(sat)

0.3

1.0

Vdc

Base-Emitter Voltage

I

C

= 150mAdc, I

B

= 15mAdc

I

C

= 500mAdc, I

B

= 50mAdc

V

BE(sat)

0.6

1.2

2.0

Vdc

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0042 Rev. 3 (100247) Page 3 of 7

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I

C

= 1.0mAdc, V

CE

= 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

h

fe

30

50

Magnitude of Small–Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 20mAdc, V

CE

= 20Vdc, f = 100MHz

|h

fe

|

2.5

Output Capacitance

V

CB

= 10Vdc, I

E

= 0, 100kHz ≤ f ≤ 1.0MHz

C

obo

8.0 pF

Input Capacitance

V

EB

= 0.5Vdc, I

C

= 0, 100kHz ≤ f ≤ 1.0MHz

C

ibo

25 pF

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Turn-On Time

See figure 8 of MIL-PRF-19500/255

t

on

35

ηs

Turn-Off Time

See Figure 9 of MIL-PRF-19500/255

t

off

300

ηs

(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.

JANSF2N2222AL

JANSF2N2222AL

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