ISL24212IRTZ

ISL24212
7
FN7590.0
March 15, 2011
The maximum value of I
DVR_OUT
can be calculated by
substituting the maximum register value of 255 into Equation 2,
resulting in Equation 3:
Equation 2 can also be used to calculate the unit sink current
step size per Register Code, resulting in Equation 4:
Determination of R
SET
The ultimate goal for the ISL24212 is to generate an adjustable
voltage between two endpoints, V
COM_MIN
and V
COM_MAX
, with
a fixed power supply voltage, AV
DD
. This is accomplished by
choosing the correct values for R
SET
, R
1
and R
2
. The exact value
of R
SET
is not critical. Values from 1k to more than 100k will
work under most conditions. Equation 5 calculates the minimum
R
SET
value:
Note that this is the absolute minimum value for R
SET
. Larger
R
SET
values reduce quiescent power, since R
1
and R
2
are
proportional to R
SET
. The ISL24212 is tested with a 5kΩ R
SET
.
Determination of R
1
and R
2
With AV
DD
, V
COM(MIN)
and V
COM(MAX)
known and R
SET
chosen
per the above requirements, R
1
and R
2
can be determined using
Equations 6 and 7:
Final Transfer Function
The voltage at the DVR_OUT pin can be calculated from
Equation 8:
With amplifier A2 in the unity-gain configuration (V
COM_OUT
tied
to IN
N
as shown in Figure 5), V
DVROUT
=V
COM_OUT
=V
COM
.
Example
As an example, suppose the A
VDD
supply is 15V, the desired
V
COM_MIN
= 6.5V and the desired V
COM_MAX
= 8.5V. R
SET
is
arbitrarily chosen to be 7.5k
Ω.
First, verify that our chosen R
SET
meets the minimum
requirement described in Equation 5:
Using Equations 6 and 7, calculate the values of R
1
and R
2
:
Table 1 shows the resulting V
COM
voltage as a function of register
value for these conditions.
Output Voltage Span Calculation
It is also possible to calculate V
COM(MIN)
and V
COM(MAX)
from the
existing resistor values.
V
COM_MIN
occurs when the greatest current, I
DVR(MAX),
is drawn
from the middle node of the R1/R2 divider. Substituting
RegisterValue = 255 into Equation 8 gives the following:
Similarly, RegisterValue = 0 for V
COM(MAX)
:
DVROUT
MAX()
A
VDD
20R
SET
--------------------
=
(EQ. 3)
I
STEP
AV
DD
256()20()R
SET
()
----------------------------------------------
=
(EQ. 4)
R
SET
MIN()
AV
DD
16
--------------
V
OUT MIN()
AV
DD
20
--------------
⎝⎠
⎛⎞
------------------------------------------------------
⎝⎠
⎜⎟
⎜⎟
⎜⎟
⎜⎟
⎛⎞
kΩ()=
(EQ. 5)
R
1
5120 R
SET
V
COM MAX()
V
COM MIN()
256 V
COM MAX()
V
COM MIN()
---------------------------------------------------------------------------------
⎝⎠
⎜⎟
⎛⎞
=
(EQ. 6)
R
2
5120 R
SET
V
COM MAX()
V
COM MIN()
255 AV
DD
V
COM MIN()
256 V
COM MAX()
+
---------------------------------------------------------------------------------------------------------------------
⎝⎠
⎜⎟
⎛⎞
=
(EQ. 7)
V
DVROUT
AV
DD
R
2
R
1
R
2
+
--------------------
⎝⎠
⎜⎟
⎛⎞
1
RegisterValue 1+
256
---------------------------------------------------
R
1
20R
SET
--------------------
⎝⎠
⎜⎟
⎛⎞
⎝⎠
⎜⎟
⎛⎞
=
(EQ. 8)
TABLE 1. EXAMPLE V
DVR_OUT
vs REGISTER VALUE
REGISTER VALUE V
DVR_OUT
(V)
08.49
20 8.34
40 8.18
60 8.02
80 7.87
100 7.71
120 7.55
127 7.50
140 7.40
160 7.24
180 7.09
200 6.93
220 6.77
240 6.62
255 6.50
7.5kΩ()R
SET
MIN()
15
16
------ -
6.5V
15
20
------ -
⎝⎠
⎛⎞
------------------------------
⎝⎠
⎜⎟
⎜⎟
⎜⎟
⎛⎞
0.163kΩ==
⎝⎠
⎜⎟
⎜⎟
⎜⎟
⎛⎞
>
(EQ. 9)
R
1
5120 7500
8.5 6.5
256 8.5 6.5
------------------------------------- -
⎝⎠
⎛⎞
⋅⋅ 35.4kΩ==
(EQ. 10)
R
2
5120 7500
8.5 6.5
255 15 6.5 256 8.5+
------------------------------------------------------------------
⎝⎠
⎛⎞
⋅⋅ 46.4kΩ==
(EQ. 11)
V
COM MIN()
AV
DD
R
2
R
1
R
2
+
--------------------
⎝⎠
⎜⎟
⎛⎞
1
R
1
20R
SET
--------------------
⎝⎠
⎜⎟
⎛⎞
⎝⎠
⎜⎟
⎛⎞
=
(EQ. 12)
V
COM MAX()
AV
DD
R
2
R
1
R
2
+
--------------------
⎝⎠
⎜⎟
⎛⎞
1
1
256
----------
R
1
20R
SET
--------------------
⎝⎠
⎜⎟
⎛⎞
⎝⎠
⎜⎟
⎛⎞
=
(EQ. 13)
ISL24212
8
FN7590.0
March 15, 2011
By finding the difference of Equation 13 and Equation 12, the total
span of V
COM
can be found:
Assuming that the I
DVROUT
(MIN) = 0 instead of I
STEP
, the
expression in Equation 14 simplifies to:
DVR_OUT Pin Leakage Current
When the voltage on the DVR_OUT pin is greater than 10V, an
additional leakage current flows into the pin in addition to the
I
SET
current. Figure 6 shows the I
SET
current and the DVR_OUT
pin current for DVR_OUT pin voltage up to 19V. In applications
where the voltage on the DVR_OUT pin will be greater than 10V,
the actual output voltage will be lower than the voltage
calculated by Equation 8 due to this extra current. The graph in
Figure 6 was measured with R
SET
= 4.99kΩ.
Power Supply Sequence
The recommended power supply sequencing is shown in
Figure 7. When applying power, V
DD
should be applied before or
at the same time as AV
DD
. The minimum time for t
VS
is 0µs.
When removing power, the sequence of V
DD
and AV
DD
is not
important.
Do not remove V
DD
or AV
DD
within 100ms of the start of the
EEPROM programming cycle. Removing power before the
EEPROM programming cycle is completed, may result in
corrupted data in the EEPROM.
Operating and Programming
Supply Voltage and Current
To program the EEPROM, AV
DD
must be 10.8V. If further
programming is not required, the ISL24212 will operate over an
AV
DD
range of 4.5V to 19V.
During EEPROM programming, I
DD
and I
AVDD
will temporarily be
4-5x higher for up to 100ms (t
PROG
).
Up/Down Counter Interface
The ISL24212 allows the adjustment of the output V
COM
voltage
and the programming of the non-volatile memory through a
single pin (CTL) when the CE (counter enable) pin is high. The CTL
pin is biased so that its voltage is set to VDD/2 if the driving
circuit is set to Tristate or High Impedance (Hi-Z), allowing
up/down operation using common digital I/O logic.
CTL Pin
When a mid-high-mid transition is detected on the CTL pin (see
Figure 11), the internal register value counts down by one at the
trailing (high-mid) edge, and the output V
COM
voltage is
increased according to Equation 8. Similarly, when a mid-low-mid
transition is detected on the CTL pin, the internal register value
counts up by one at the trailing (low-mid) edge, and the output
V
COM
voltage is decreased. Once the maximum or minimum
value is reached, the counter saturates and will not overflow or
underflow beyond those values.
CTL should have a noise filter to reduce bouncing or noise on the
input that could cause unwanted counts when the CE pin is high.
Figure 8 shows a simple debouncing circuit consisting of a series
1kΩ resistor and a shunt 0.01µF capacitor connected on the CTL
pin. To avoid unintentional adjustment, the ISL24212 guarantees
to reject CTL pulses shorter than 20µs.
This pin is pulled above 4.9V to program the EEPROM. See
“Programming the EEPROM” on page 9 for details.
After CE (Counter Enable) is asserted and after programming
EEPROM, the very first CTL pulse is ignored (see Figure 11) to
avoid the possibility of a false count (CTL state may be unknown
after programming).
V
COM
SPAN AV
DD
R
2
R
1
R
2
+
--------------------
⎝⎠
⎜⎟
⎛⎞
1
1
256
----------
⎝⎠
⎛⎞
R
1
20R
SET
--------------------
⎝⎠
⎜⎟
⎛⎞
=
(EQ. 14)
V
COM
SPAN
R
1
R
2
R
1
R
2
+
--------------------
⎝⎠
⎜⎟
⎛⎞
AV
DD
20R
SET
--------------------
⎝⎠
⎜⎟
⎛⎞
R
1
R
2
R
1
R
2
+
--------------------
⎝⎠
⎜⎟
⎛⎞
I
DVROUT
MAX()==
(EQ. 15)
FIGURE 6. DVR_OUT PIN LEAKAGE CURRENT
02468101214161820
OUT PIN VOLTAGE (V)
CURRENT (mA)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
OUT PIN CURRENT
SET PIN CURRENT
REGISTER = 255
V
DD
A
VDD
t
VS
FIGURE 7. POWER SUPPLY SEQUENCE
FIGURE 8. EXTERNAL DEBOUNCER ON CTL PIN
ISL24212
CTL
0.01µF
1kΩ
AV
DD
CLOSE TO
EEPROM
PROGRAM
ISL24212
9
FN7590.0
March 15, 2011
CE Pin
To change the counter controlling the output voltage, the CE
(Counter Enable) pin must be pulled high (V
DD
). When the CE pin
is pulled low, the counter value is loaded from EEPROM, which
takes 10ms (during which the inputs should remain constant).
The CE pin has an internal pull-down to keep it at a logic low
when not being driven. CE should be pulled low before powering
the device down to ensure that any glitches or transients during
power-down will not cause unwanted EEPROM overwriting.
The CE pin has a Schmitt trigger on the input to prevent false
triggering during slow transitions of the CE pin. The CE pin
transition time should be 10µs or less.
Programming the EEPROM
To program the non-volatile EEPROM, pull the CTL pin above 4.9V
for more than 200µs. The level and timing is shown in Figure 9. It
then takes a maximum of 100ms after CTL crosses 4.9V for the
programming to be completed inside the device.
When the part is programmed, the data in the counter register is
written into the EEPROM. This value will be loaded from the
EEPROM during subsequent power-ups as well as when the CE
pin is pulled low. The ISL24212 is factory-programmed to
mid-scale. As with asserting CE, the first pulse after a program
operation is ignored. The EEPROM contents can be written and
verified using the following steps:
1. Power-up the ISL24212. The EEPROM value will be loaded.
2. Set the CE pin to V
DD
.
3. Change the V
OUT
voltage using the CTL pin to the desired
value, noting that first pulse will be ignored.
4. Pull the CTL pin to 4.9V or higher for at least 200µs. The
counter value will be written to EEPROM after 100ms.
5. Change the V
OUT
value (using the CTL pin) to a different value,
noting that first pulse after programming will be ignored.
6. Set the CE pin to 0V. The stored output value will be loaded
from EEPROM after 10ms.
7. Verify that the output value is the same value programmed in
Step 4.
The CTL pin should be left floating after programming. The
voltage at the CTL pin will be internally biased to V
DD
/2 to ensure
that no additional pulses will be seen by the Up/Down counter. To
prevent further changes, ground the CE pin.
Typical Application Circuit
Shown below in Figure 10 is a typical circuit that can be used to
program the ISL24212 via the up/down counter interface. Three
momentary push-button switches are required. SW1 connected
between CTL and AV
DD
allows the user to bring CTL above V
DD
for
programming the EEPROM, SW2 connected to V
DD
to pull CTL up,
and SW3 connected to GND to pull CTL to down. All the switches
should have 1k
Ω current-limiting resistors in series.
For adjustment and programming to occur, the CE pin has to be
set to V
DD
. This can be achieved by a single-pull double-throw
switch (SW4) connected between V
DD
and GND.
Note that pressing the UP button increments the counter, but
results in V
COM_OUT
decreasing. Similarly, pressing the DOWN
button decrements the counter, and results in V
COM_OUT
increasing.
CTL VOLTAGE
TIME
4.9V
t
PROG
FIGURE 9. EEPROM PROGRAMMING
>200µs
100ms
EEPROM
OPERATION
COMPLETE
FIGURE 10. TYPICAL APPLICATION CIRCUIT
ISL24212
CTL
0.01µF
1k
Ω
V
DD
CLOSE TO
UP
PROGRAM
1kΩ
AV
DD
DOWN
1kΩ
EEPROM
CE
DVR_OUT
SET
R1
R2
RSET
IN
N
VCOM_OUT
V
COM
to LCD Panel
SW2
SW1
SW3
SW4
AV
DD
V
DD
AV
DD
GND
V
DD
AV
DD
0.01µF
0.1µF
0.1µF
ENABLE
V
DD
ADJUST /
PROGRAM
DISABLE

ISL24212IRTZ

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
LCD Gamma Buffers ISL24212IRTZ VCOM DR VR + CLBTR UP/DN
Lifecycle:
New from this manufacturer.
Delivery:
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