VS-SD823C12S30C

VS-SD823C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Jan-14
1
Document Number: 93181
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Recovery Diodes
(Hockey PUK Version), 810 A/910 A
FEATURES
High power FAST recovery diode series
2.0 μs to 3.0 μs recovery time
High voltage ratings up to 2500 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Hockey PUK version case style B-43
Maximum junction temperature 150 °C
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Snubber diode for GTO
High voltage freewheeling diode
Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
810A /910 A
Package B-43
Circuit configuration Single diode
B-43
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
SD823C..C
UNITS
S20 S30
I
F(AV)
810 910 A
T
hs
55 55 °C
I
F(RMS)
1500 1690
A
I
FSM
50 Hz 9300 9600
60 Hz 9730 10 050
V
RRM
Range 1200 to 2500 1200 to 2500 V
t
rr
2.0 3.0 μs
T
J
25
°C
T
J
- 40 to 150
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VS-SD823C..C
12 1200 1300
50
16 1600 1700
20 2000 2100
25 2500 2600
VS-SD823C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Jan-14
2
Document Number: 93181
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
SD823C..C
UNITS
S20 S30
Maximum average forward current
at heatsink temperature
I
F(AV)
180° conduction, half sine wave
Double side (single side) cooled
810 (425) 910 (470) A
55 (85) 55 (85) °C
Maximum RMS forward current I
F(RMS)
25 °C heatsink temperature double side cooled 1500 1690
A
Maximum peak, one-cycle forward,
non-repetitive current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
9300 9600
t = 8.3 ms 9730 10 050
t = 10 ms
100 % V
RRM
reapplied
7820 8070
t = 8.3 ms 8190 8450
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
432 460
kA
2
s
t = 8.3 ms 395 420
t = 10 ms
100 % V
RRM
reapplied
306 326
t = 8.3 ms 279 297
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 1.00 0.95
V
High level value of threshold voltage V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 1.11 1.06
Low level value of forward
slope resistance
r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 0.80 0.60
mW
High level value of forward
slope resistance
r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.76 0.57
Maximum forward voltage drop V
FM
I
pk
= 1500 A, T
J
= T
J
maximum
t
p
= 10 ms sinusoidal wave
2.20 1.85 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
J
= 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T
J
= 125 °C
t
rr
AT 25 % I
RRM
(μs)
I
pk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
V
r
(V)
t
rr
AT 25 % I
RRM
(μs)
Q
rr
(μC)
I
rr
(A)
S20 2.0
1000 50 - 50
3.5 240 110
S30 3.0 5.0 380 130
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
case junction to heatsink
R
thJ-hs
DC operation single side cooled 0.076
K/W
DC operation double side cooled 0.038
Mounting force, ± 10 % 9800 (1000) N (kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet B-43
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.007 0.007 0.005 0.005
T
J
= T
J
maximum K/W
120° 0.008 0.008 0.008 0.008
90° 0.010 0.010 0.011 0.011
60° 0.015 0.015 0.016 0.016
30° 0.026 0.026 0.026 0.026
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
VS-SD823C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Jan-14
3
Document Number: 93181
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700
30°
60°
90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD823C..S20C Se ries
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink TemperatureC)
Conduction Period
SD823C..S20C Series
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700
30°
60°
90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 8 2 3 C . . S3 0 C Se r i e s
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink TemperatureC)
Conduction Period
SD823C..S30C Se ries
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30°
60°
90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD823C..S20C Series
(Double Side Cooled)
R (DC) = 0.038 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 250 500 750 1000 1250 1500
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD 8 2 3 C . . S2 0 C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/ W
thJ-hs

VS-SD823C12S30C

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1200 Volt 910 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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