VS-SD823C..C Series
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Vishay Semiconductors
Revision: 14-Jan-14
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Document Number: 93181
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Fig. 24 - Recovery Current Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 29 - Frequency Characteristics
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
Maximum Reverse Rec overy Current - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Si n e Pu l se
150 A
FM
SD 8 2 3 C . . S2 0 C Se r i e s
T = 150 °C ; V > 100V
r
J
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Ra te Of Fa ll Of Forward Current - d i/d t (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 1000 A
Si n e Pu l se
FM
150 A
SD 8 2 3 C . . S3 0 C Se r i e s
T = 150 °C; V > 100V
J
r
0
200
400
600
800
1000
1200
0 50 100 150 200 250 300
M a x i m u m Re v e r se Re c o v e r y C h a r g e - Q r r ( µ C )
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
I = 1000 A
Si n e Pu l se
150 A
FM
SD823C..S30C Series
T = 150 °C; V > 100V
J
r
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 250 300
Ma ximum Reve rse Re c overy Current - Irr ( A)
500 A
Ra t e O f Fa l l O f Fo r w a rd C u r re n t - d i / d t ( A / µ s)
150 A
I = 1000 A
Si n e P u l se
FM
SD 8 2 3 C . . S3 0 C Se r i e s
T = 150 °C; V > 100V
J
r
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
Peak Forward Current (A)
10 jo ule s p er p ulse
6
4
d v/ dt = 1000V/ µs
Si n u s o i d a l Pu l se
0.6
0.4
0.2
0.1
T = 150°C, V = 800V
J
RRM
SD 8 2 3 C . . S2 0 C Se r i e s
tp
0.08
1E2
1E3
1E4
1E11E21E31E4
Pulse Ba se w id t h ( µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
20000
400
15000
1000
2000
6000
Peak Forward Current (A)
T = 5 5 ° C , V = 8 0 0 V
C
RRM
SD 8 2 3 C . . S2 0 C Se r i e s
Sinusoidal Pulse
tp
3000
