Philips Semiconductors Product data sheet
NE1619HECETA4 Temperature and voltage monitor
2004 Oct 05
8
DC ELECTRICAL CHARACTERISTICS
V
DD
= 3.3 V (see Note 4); T
amb
= 0 °C to +125 °C unless otherwise specified.
SYMBOL
PARAMETER CONDITION MIN. TYP. MAX. UNIT
V
DD
Supply voltage 2.8 3.3 5.5 V
I
DD
Supply current Standby mode – 100 – µA
I
DD
Supply current Operating mode – 250 500 µA
t
C
Total monitoring cycle time
1
All conversions – 0.25 0.50 sec
T
R
Temperature resolution Local and Remote – ±1.0 – °C
p
T
amb
= 25 °C – – ±2.0 °C
AI
u
u
y
T
amb
= 0 °C to +120 °C – – ±3.0 °C
p
T
amb
= 25 °C – – ±3.0 °C
AE
x
u
u
y
T
amb
= 0 °C to +120 °C – – ±5.0 °C
High level – 100 – µA
S
u
u
Low level – 10 – µA
Voltage-to-Digital converter (12V
IN
, 5V
IN
, 3.3V
IN
, 2.5V
IN
, V
CCP
, V
DD
)
VUE Unadjusted error – – ±2.0 %FS
VDNL Differential non-linearity error – ±1.0 – LSB
VRIN V
IN
input resistance 100 200 – kΩ
VPSS V
IN
power supply sensitivity – ±1.0 – %/V
Digital output (SDA, A0
2
)
V
OH
Output High voltage I
OUT
= –3.0 mA, V
DD
= 2.8 V – – 2.4 V
V
OL
Output Low voltage I
OUT
= 3.0 mA, V
DD
= 3.8 V 0.4 – – V
I
OH
Output High leakage current V
OUT
= V
DD
– 0.1 10.0 µA
SMB digital input voltages (SDA, SCL)
V
IH
Input High voltage – – 0.6V
DD
V
V
IL
Input Low voltage – – 0.3V
DD
V
Digital input voltages (A0, VID0–4, NT_IN
3
)
V
IH
Input High voltage – – 2.0 V
V
IL
Input Low voltage 0.4 – – V
Digital input current (all digital inputs)
I
IH
Input High current V
IN
= V
DD
–1.0 – – µA
I
IL
Input Low current V
IN
= GND – – 1.0 µA
C
IN
Input capacitance – 20.0 – pF
NOTES:
1. Total monitoring cycle time includes all temperature conversions and all voltage conversions.
2. When A0 is selected as output in NAND-TREE test mode.
3. When D– is selected as input in NAND-TREE test mode.
4. Operating the device at 2.8 V to 5.5 V is allowed, but parameter values in characteristics table are not guaranteed.
