IXFH88N20Q Datasheet IXFK88N20Q, IXFH88N20Q, IXFX88N20Q | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 200 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 200 V

V

GS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C88A

I

DM

T

C

= 25°C, pulse width limited by T

JM

352 A

I

AR

T

C

= 25°C88A

E

AR

T

C

= 25°C50mJ

E

AS

T

C

= 25°C 2.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 20 V/ns

T

J

≤ 150°C, R

G

= 2 Ω

P

D

T

C

= 25°C 500 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.063 in) from case for 10 s 300 °C

M

d

Mounting torque TO-247 1.13/10 Nm/lb.in.

TO-264 0.9/6 Nm/lb.in.

Weight TO-247, PLUS 247 6 g

TO-264 10 g

HiPerFET

TM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Features

z

Low gate charge

z

International standard packages

z

Epoxy meet UL 94 V-0, flammability

classification

z

Low R

DS (on)

HDMOS

TM

process

z

Rugged polysilicon gate cell structure

z

Avalanche energy and current rated

z

Fast intrinsic Rectifier

Advantages

z

Easy to mount

z

Space savings

z

High power density

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 250 uA 200 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.0 4.0 V

I

GSS

V

GS

= ±20 V

DC, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

T

J

= 25°C25µA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 • I

D25

30 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS98969A(03/03)

TO-247 AD (IXFH)

IXFH 88N20Q

IXFK 88N20Q

IXFX 88N20Q

V

DSS

= 200 V

I

D25

= 88 A

R

DS(on)

= 30m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

Preliminary data sheet

G = Gate

S = Source TAB = Drain

TO-264 AA (IXFK)

S

G

D

D (TAB)

PLUS 247

TM

(IXFX)

D (TAB)

G

D

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 10 V; I

D

= 0.5 • I

D25

, pulse test 40 55 S

C

iss

4150 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 1100 pF

C

rss

340 pF

t

d(on)

18 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

20 ns

t

d(off)

R

G

= 2.0 Ω (External), 61 ns

t

f

15 ns

Q

g(on)

146 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

30 nC

Q

gd

60 nC

R

thJC

0.25 K/W

R

thCK

TO-247 0.25 K/W

TO-264, PLUS 247 0.15 K/W

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1 2 3

TO-247 AD (IXFH) Outline

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 88 A

I

SM

Repetitive; pulse width limited by T

JM

352 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.3 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

200 ns

Q

RM

0.8 µC

I

RM

8 A

I

F

= 25A -di/dt = 100 A/µs, V

R

= 100 V

IXFH 88N20Q IXFK 88N20Q

IXFX 88N20Q

TO-264 AA (IXFK) Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

PLUS 247 (IXFX) Outline

Fig. 2. Extended Output Characteristics

@ 25 deg. C

0

30

60

90

12 0

15 0

18 0

024 681012

V

DS

- Volts

I

D

- Amperes

V

GS

= 1 0V

9V

8V

5V

6V

7V

Fig. 3. Output Characteristics

@ 125 Deg. C

0

15

30

45

60

75

90

0 1234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 1 0V

9V

8V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

15

30

45

60

75

90

0 0.5 1 1.5 2 2.5 3 3.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 1 0V

9V

8V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D25

Value vs.

Junction Temperature

0.6

1

1. 4

1. 8

2.2

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalize

d

I

D

= 88A

I

D

= 44A

V

GS

= 1 0V

Fig. 6. Drain Current vs. Case

Temperature

0

20

40

60

80

10 0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Normalized to I

D25

Value vs. I

D

0.7

1

1. 3

1. 6

1. 9

2.2

2.5

2.8

3.1

0 306090120150180210

I

D

- Amperes

R

DS(on)

- Normalize

d

T

J

= 1 25ºC

T

J

= 25ºC

V

GS

= 1 0V

IXFH 88N20Q IXFK 88N20Q

IXFX 88N20Q

IXFH88N20Q

IXFH88N20Q

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