IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXFH 88N20Q IXFK 88N20Q
IXFX 88N20Q
Fig. 11. Capacitance
10 0
10 0 0
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - p
C
iss
C
oss
C
rss
f = 1 M Hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0306090120150
Q
G
- nanoCoulombs
V
GS
- Volts
V
DS
= 1 00V
I
D
= 44A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
20
40
60
80
10 0
33.544.555.56
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
1 25ºC
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th)JC
-
(ºC/W)
Fig. 8. Transconductance
0
20
40
60
80
10 0
0 30 60 90 120 150 180
I
D
- Amperes
G
fs
- Siemens
T
J
= -40ºC
25ºC
1 25ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
40
80
12 0
16 0
200
0.4 0.55 0.7 0.85 1 1.15 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 1 25ºC
T
J
= 25ºC
