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FFSH5065A

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. 3
1 Publication Order Number:
FFSH5065A/D
FFSH5065A
Silicon Carbide Schottky
Diode
650 V, 50 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 240 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
www.onsemi.com
TO−247−2LD
CASE 340CL
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH5065A = Specific Device Code
1
2
$Y&Z&3&K
FFSH
5065A
1. Cathode 2. Anode
FFSH5065A
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 240 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 144°C 50
A
Continuous Rectified Forward Current @ T
C
< 135°C 60
I
F,
Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
1400 A
T
C
= 150°C, 10 ms
1300 A
I
F,SM
Non-Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 230 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 120 A
Ptot Power Dissipation
T
C
= 25°C 429 W
T
C
= 150°C 72 W
T
J
, T
STG
Operating and Storage Temperature Range −55 to +175 °C
TO−247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 240 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 31 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max 0.35 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol
Parameter Test Condition Min Typ Max Unit
V
F
Forward Voltage
I
F
= 50 A, T
C
= 25°C − 1.51 1.75
V
I
F
= 50 A, T
C
= 125°C − 1.67 2.0
I
F
= 50 A, T
C
= 175°C − 1.82 2.4
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C − − 200 mA
V
R
= 650 V, T
C
= 125°C − − 400
V
R
= 650 V, T
C
= 175°C − − 600
Q
C
Total Capacitive Charge V = 400 V − 147 − nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz − 2530 −
pF
V
R
= 200 V, f = 100 kHz − 271 −
V
R
= 400 V, f = 100 kHz − 211 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%.
ORDERING INFORMATION
Part Number Top Marking Package Packing Method Quantity
FFSH5065A FFSH5065A TO−247−2LD
(Pb-Free / Halogen Free)
Tube 30 Units
FFSH5065A
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
0.1
100
1000
10000
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
0
0
40
80
120
160
200
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
25
0
100
200
300
400
500
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
25
0
100
200
300
400
500
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
200
10
−9
10
−8
10
−7
10
−6
10
−5
T
J
= −55
o
C
T
J
= 175
o
C
T
J
= 75
o
C
T
J
= 125
o
C
T
J
= 25
o
C
I
R
, REVERSE CURRENT (A)
V
R
, REVERESE VOLTAGE (V)
0
0
10
20
30
40
50
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= −55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
12 3
300 400 500 600 650
50 75 125 150 175 200 50 75 100 125 150 175
100 200 300 400 500 600 650
1 10 100 650
P1-P3P4-P6P7-P8

FFSH5065A

Mfr. #:
Buy FFSH5065A
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 50A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
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