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FFSH5065A

P1-P3P4-P6P7-P8
FFSH5065A
www.onsemi.com
4
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
0
0
10
20
30
40
50
E
C
, CAPACITIVE ENERGY (mJ)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
Figure 8. Junction-to-Case Transient Thermal Response Curve
100 200 300 400 500 600 650
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
0.001
0.01
0.1
1
2
DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
Z
qJC
(t) = r(t) x R
qJC
R
qJC
= 0.35
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
qJC
(t) + T
C
P
DM
t
1
t
2
FFSH5065A
www.onsemi.com
5
TEST CIRCUIT AND WAVEFORMS
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
LR
+
−
DUT
CURRENT
SENSE
V
DD
V
DD
Q1
IV
V
AVL
tt
0
t
1
t
2
I
L
I
L
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
R(AVL)
/ (V
R(AVL)
− V
DD
)]
Q1 = IGBT (BV
CES
> DUT V
R(AVL)
)
TO−247−2LD
CASE 340CL
ISSUE O
DATE 31 OCT 201
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
http://onsemi.com
1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13850G
ON SEMICONDUCTOR STANDARD
TO−247−2LD
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2
P1-P3P4-P6P7-P8

FFSH5065A

Mfr. #:
Buy FFSH5065A
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 50A SIC SBD
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New from this manufacturer.
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