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K3010P-X007T

P1-P3P4-P6P7-P7
K3010P, K3010PG Series
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 01-Jun-12
1
Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototriac Output, Non-Zero Crossing, 250 V
DRM
DESCRIPTION
The K3010P, K3010PG series consists of a photo-transistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 6-pin plastic dual inline package
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• BSI: BS EN60065:2002 and IEC 60065:2001, certificate
number 7955. An BS EN60950-1:2006 certificate number
7956
• DIN EN 60747-5-5
• CQC: GB8898-2001
FEATURES
• Isolation materials according to UL 94 V-0
• Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high
common mode rejection
•I
FT
of 5 mA, 10 mA, and 15 mA
• Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV
peak
• Isolation test voltage, 5300 V
RMS
, t = 1 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I to IV at mains voltage ≤ 300 V
• for appl. class I to IV at mains voltage ≤ 600 V
according to DIN EN60747-5-5 (VDE0884), suitable for:
- Monitors
- Air conditioners
- Line switches
- Solid state relay
- Microwave
Note
• G = leadform 10.16 mm; G is not marked on the body.
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
i179041-2
DIP
SMD
ORDERING INFORMATION
K3010P#X0##T
PART NUMBER TRIGGER
CURRENT
BIN
PACKAGE OPTION TAPE AND
REEL
AGENCY CERTIFIED/PACKAGE TRIGGER CURRENT, I
FT
VDE, cUL, BSI 5 mA 10 mA 15 mA
DIP-6 K3012P K3011P K3010P
DIP-6, 400 mil K3012PG K3011PG K3010PG
SMD-6, option 7 K3012P-X007T - K3010P-X007T
10.16 mm
7.62 mm
DIP-6
G leadform
> 0.7 mm
Option 7
K3010P, K3010PG Series
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 01-Jun-12
2
Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054)
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
Test voltage must be applied within dV/dt ratings.
(2)
I
FT
is defined as a minimum trigger current.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
80 mA
Forward surge current t
p
≤ 10 μs I
FSM
3A
Power dissipation P
diss
100 mW
Junction temperature T
j
100 °C
OUTPUT
Off state output terminal voltage V
DRM
250 V
On state RMS current I
TRM
100 mA
Peak surge current, non-repetitive t
p
≤ 10 ms I
TMS
1.5 A
Power dissipation P
diss
300 mW
Junction temperature T
j
100 °C
COUPLER
Isolation test voltage (RMS) t = 1 s V
ISO
5300 V
RMS
Total power dissipation P
tot
350 mW
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Soldering temperature
(1)
2 mm from case, t ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
OUTPUT
Forward peak off-state voltage
(repetitive)
I
RDM
= 100 nA V
DRM
(1)
250 V
Peak on-state voltage I
TM
= 100 mA V
TM
1.5 3 V
Critical rate of rise of off-state voltage I
FT
= 0, I
FT
= 30 mA
dV/d
tcr
10 V/μs
dV/d
tcrq
0.1 0.2 V/μs
COUPLER
(2)
Collector emitter trigger current V
S
= 3 V, R
L
= 150 Ω
K3010P I
FT
815mA
K3010PG I
FT
815mA
K3011P I
FT
510mA
K3011PG I
FT
510mA
K3012P I
FT
25mA
K3012PG I
FT
25mA
Holding current I
F
= 10 mA, V
S
≥ 3 V I
H
100 μA
K3010P, K3010PG Series
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 01-Jun-12
3
Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Test Circuit for dV/dt
cr
and dV/dt
crq
Fig. 2
Fig. 3 - Motor Control Circuit
V~
R
S
95 10813
Test condition:
dV/dt
cr
V
S
= 2/3 V
DRM
(sine wave)
R
L
= 33 kΩ
dV/dt
crq
V
eff.
= 30 V
(sine wave)
R
L
= 2 kΩ
I
FT
R
L
I
F
≥
I
FT
95 10814
dV/dt
cr
Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off state to the on state
dV/dt
crq
Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from I
FT
to zero
I
F
= 0
dV/dt
cr
dV/dt
crq
M
95 10815
270
TT L
+ 5 V
0.1 µF
VAC ~
Galvanic seperation
P1-P3P4-P6P7-P7

K3010P-X007T

Mfr. #:
Buy K3010P-X007T
Manufacturer:
Vishay Semiconductors
Description:
Triac & SCR Output Optocouplers Phototriac NZC 250Vdrm IFT=15mA
Lifecycle:
New from this manufacturer.
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