FDI2532 Datasheet FDI2532 | P1-P3

August 2002

FDB2532 / FDP2532 / FDI2532 Rev. B

FDB2532 / FDP2532 / FDI2532

N-Channel PowerTrench

®

MOSFET

150V, 79A, 16mΩ

Features

•r

DS(ON)

= 14mΩ (Typ.), V

GS

= 10V, I

D

= 33A

•Q

g

(tot) = 82nC (Typ.), V

GS

= 10V

• Low Miller Charge

•Low Q

RR

Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82884

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

MOSFET Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 150 V

V

GS

Gate to Source Voltage ±20 V

I

D

Drain Current

79 A

Continuous (T

C

= 25

o

C, V

GS

= 10V)

Continuous (T

C

= 100

o

C, V

GS

= 10V) 56 A

Continuous (T

amb

= 25

o

C, V

GS

= 10V, R

θJA

= 43

o

C/W) 8 A

Pulsed Figure 4 A

E

AS

Single Pulse Avalanche Energy (Note 1) 400 mJ

P

D

Power dissipation 310 W

Derate above 25

o

C2.07W/

o

C

T

J

, T

STG

Operating and Storage Temperature -55 to 175

o

C

R

θJC

Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48

o

C/W

R

θJA

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62

o

C/W

R

θJA

Thermal Resistance Junction to Ambient TO-263, 1in

2

copper pad area 43

o

C/W

S

G

D

TO-263AB

FDB SERIES

TO-220AB

FDP SERIES

DRAIN

GATE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

TO-262AB

FDI SERIES

FDB2532 / FDP2532 / FDI2532

Package Marking and Ordering Information

Electrical Characteristics

T

C

= 25°C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Resistive Switching Characteristics

(V

GS

= 10V)

Drain-Source Diode Characteristics

Notes:

1: Starting T

J

= 25°C, L = 0.5 mH, I

AS

= 40A.

2: Pulse Width = 100s

Device Marking Device Package Reel Size Tape Width Quantity

FDB2532 FDB2532 TO-263AB 330mm 24mm 800 units

FDP2532 FDP2532 TO-220AB Tube N/A 50 units

FDI2532 FDI2532 TO-262AB Tube N/A 50 units

Symbol Parameter Test Conditions Min Typ Max Units

B

VDSS

Drain to Source Breakdown Voltage I

D

= 250µA, V

GS

= 0V 150 - - V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 120V - - 1

µA

V

GS

= 0V T

C

= 150

o

C- - 250

I

GSS

Gate to Source Leakage Current V

GS

= ±20V - - ±100 nA

V

GS(TH)

Gate to Source Threshold Voltage V

GS

= V

DS

, I

D

= 250µA2-4V

r

DS(ON)

Drain to Source On Resistance

I

D

= 33A, V

GS

= 10V - 0.014 0.016

Ω

I

D

= 16A, V

GS

= 6V, - 0.016 0.024

I

D

= 33A, V

GS

= 10V,

T

C

= 175

o

C

- 0.040 0.048

C

ISS

Input Capacitance

V

DS

= 25V, V

GS

= 0V,

f = 1MHz

-5870- pF

C

OSS

Output Capacitance - 615 - pF

C

RSS

Reverse Transfer Capacitance - 135 - pF

Q

g(TOT)

Total Gate Charge at 10V V

GS

= 0V to 10V

V

DD

= 75V

I

D

= 33A

I

g

= 1.0mA

-82107nC

Q

g(TH)

Threshold Gate Charge V

GS

= 0V to 2V - 11 14 nC

Q

gs

Gate to Source Gate Charge - 23 - nC

Q

gs2

Gate Charge Threshold to Plateau - 13 - nC

Q

gd

Gate to Drain “Miller” Charge - 19 - nC

t

ON

Turn-On Time

V

DD

= 75V, I

D

= 33A

V

GS

= 10V, R

GS

= 3.6Ω

--69ns

t

d(ON)

Turn-On Delay Time - 16 - ns

t

r

Rise Time - 30 - ns

t

d(OFF)

Turn-Off Delay Time - 39 - ns

t

f

Fall Time - 17 - ns

t

OFF

Turn-Off Time - - 84 ns

V

SD

Source to Drain Diode Voltage

I

SD

= 33A - - 1.25 V

I

SD

= 16A - - 1.0 V

t

rr

Reverse Recovery Time I

SD

= 33A, dI

SD

/dt= 100A/µs- - 105ns

Q

RR

Reverse Recovery Charge I

SD

= 33A, dI

SD

/dt= 100A/µs - - 327 nC

FDB2532 / FDP2532 / FDI2532

Typical Characteristics T

A

= 25°C unless otherwise noted

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

T

C

, CASE TEMPERATURE (

o

C)

POWER DISSIPATION MULTIPLIER

0

0255075100 175

0.2

0.4

0.6

0.8

1.0

1.2

125

150

0

25

50

75

100

125

25 50 75 100 125 150 175

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

V

GS

= 10V

0.01

0.1

1.0

10

-5

10

-4

10

-3

10

-2

10-1 10

0

10

1

2.0

t, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED

THERMAL IMPEDANCE

NOTES:

DUTY FACTOR: D = t

1

/t

2

PEAK T

J

= P

DM

x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

100

1000

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

2000

50

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

V

GS

= 10V

T

C

= 25

o

C

I = I

25

175 - T

C

150

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

FDI2532

FDI2532

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