©2002 Fairchild Semiconductor Corporation FDB2532 / FDP2532 / FDI2532 Rev. B
FDB2532 / FDP2532 / FDI2532
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7515 and AN7517
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics T
A
= 25°C unless otherwise noted
0.1
1
10
100
1000
1 10 100
300
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10µs
10ms
1ms
DC
100µs
1
10
100
0.001 0.01 0.1 1
200
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
30
60
90
120
150
180
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
30
60
90
120
150
180
0.0 1.0 2.0 3.0 4.0 5.0 6.0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
13
14
15
16
17
18
0 20406080
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
DRAIN TO SOURCE ON RESISTANCE (m Ω)
V
GS
= 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
3.0
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
=33A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
