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IRLML5203TRPBF

P1-P3P4-P6P7-P9P10-P10
Parameter Max. Units
V
DS
Drain- Source Voltage -30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -3.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -2.4 A
I
DM
Pulsed Drain Current -24
P
D
@T
A
= 25°C Power Dissipation 1.25
P
D
@T
A
= 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 100 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
HEXFET
®
Power MOSFET
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3
TM
, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l RoHS Compliant, Halogen-Free
V
DSS
R
DS(on)
max (mW) I
D
-30V 98@V
GS
= -10V -3.0A
165@V
GS
= -4.5V -2.6A
S
G
1
2
D3
Micro3
TM
IRLML5203PbF
Form Quantity
IRLML5203TRPbF Micro3
™
(SOT-23) Tape and Reel 3000 IRLML5203TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 17 26 ns T
J
= 25°C, I
F
= -1.3A
Q
rr
Reverse Recovery Charge ––– 12 18 nC di/dt = -100A/μs
Source-Drain Ratings and Characteristics
A
-24



-1.3
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250μA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 98 V
GS
= -10V, I
D
= -3.0A
––– ––– 165 V
GS
= -4.5V, I
D
= -2.6A
V
GS(th)
Gate Threshold Voltage -1.0 ––– -2.5 V V
DS
= V
GS
, I
D
= -250μA
g
fs
Forward Transconductance 3.1 ––– ––– S V
DS
= -10V, I
D
= -3.0A
––– ––– -1.0 V
DS
= -24V, V
GS
= 0V
––– ––– -5.0 V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 9.5 14 I
D
= -3.0A
Q
gs
Gate-to-Source Charge ––– 2.3 3.5 nC V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.6 2.4 V
GS
= -10V
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= -15V
t
r
Rise Time ––– 18 ––– I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 88 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 52 ––– V
GS
= -10V
C
iss
Input Capacitance ––– 510 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 71 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 43 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
mΩ
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
3.0A
0.01
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
2.0 3.0 4.0 5.0 6.0 7.0
V = -15V
20μs PULSE W IDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
P1-P3P4-P6P7-P9P10-P10

IRLML5203TRPBF

Mfr. #:
Buy IRLML5203TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
Lifecycle:
New from this manufacturer.
Delivery:
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