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IRLML5203TRPBF

P1-P3P4-P6P7-P9P10-P10
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 4 8 12 16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-3.0A
V =-15V
DS
V =-24V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
200
400
600
800
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
DS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0 4 8 12 16
-I
D
, Drain Current (A)
0.00
0.10
0.20
0.30
0.40
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= -10V
V
GS
= -4.5V
4.0 6.0 8.0 10.0 12.0 14.0 16.0
-V
GS,
Gate -to -Source Voltage (V)
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= -3.0A
P1-P3P4-P6P7-P9P10-P10

IRLML5203TRPBF

Mfr. #:
Buy IRLML5203TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
Lifecycle:
New from this manufacturer.
Delivery:
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