R8C/2E Group, R8C/2F Group 5. Electrical Characteristics
Rev.1.00 Dec 14, 2007 Page 29 of 39
REJ03B0222-0100
NOTES:
1. The measurement condition is T
opr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. This condition (external power V
CC rise gradient) does not apply if VCC 1.0 V.
3. t
w(por1) indicates the duration the external power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain t
w(por1) for 30 s or more if 20°C Topr 85°C, maintain tw(por1) for
3,000 s or more if 40°C T
opr < 20°C.
Figure 5.3 Reset Circuit Electrical Characteristics
Table 5.10 Power-on Reset Circuit, Voltage Monitor 0 Reset Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
por1
Power-on reset valid voltage
(3)
−−0.1 V
V
por2 Power-on reset valid voltage 0 2.6 V
t
rth
External power VCC rise gradient
(2)
20 −−mV/msec
NOTES:
1. Ensure that the voltage is 2.2 V or above during the sampling time.
2. The sampling time is fOCO-S divided by 1 × 4 cycles.
max. 2.6 V
V
por1
Internal
reset signal
(“L” valid)
t
w(por1)
Sampling time
(1, 2)
max. 2.6 V
1
f
OCO-S
× 32
1
f
OCO-S
× 32
Vpor2
2.2 V
External
Power V
CC
trth
trth
R8C/2E Group, R8C/2F Group 5. Electrical Characteristics
Rev.1.00 Dec 14, 2007 Page 30 of 39
REJ03B0222-0100
NOTES:
1. V
CC = 2.7 to 5.5 V, Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. These standard values show when the FRA1 register value after reset is assumed.
NOTE:
1. V
CC = 2.7 to 5.5 V, Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
NOTES:
1. The measurement condition is V
CC = 2.7 to 5.5 V and Topr = 25°C.
2. Waiting time until the internal power supply generation circuit stabilizes during power-on.
3. Time until system clock supply starts after the interrupt is acknowledged to exit stop mode.
Table 5.11 High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
fOCO40M High-speed on-chip oscillator frequency
temperature • supply voltage dependence
V
CC = 4.75 V to 5.25 V
0°C T
opr 60°C
(2)
39.2 40 40.8 MHz
V
CC = 3.0 V to 5.5 V
20°C T
opr 85°C
(2)
38.8 40 41.2 MHz
V
CC = 3.0 V to 5.5 V
40°C T
opr 85°C
(2)
38.4 40 41.6 MHz
V
CC = 2.7 V to 5.5 V
20°C T
opr 85°C
(2)
38 40 42 MHz
V
CC = 2.7 V to 5.5 V
40°C T
opr 85°C
(2)
37.6 40 42.4 MHz
V
CC = 5.0 V ±10%
20°C T
opr 85°C
(2)
38.8 40 40.8 MHz
V
CC = 5.0 V ±10%
40°C T
opr 85°C
(2)
38.4 40 40.8 MHz
High-speed on-chip oscillator frequency when
correction value in FRA7 register is written to
FRA1 register
V
CC = 5.0 V, Topr = 25°C 36.864 MHz
V
CC = 2.7 V to 5.5 V
20°C T
opr 85°C
3% 3% %
Value in FRA1 register after reset 08h F7h
Oscillation frequency adjustment unit of high-
speed on-chip oscillator
Adjust FRA1 register
(value after reset) to 1
+0.3 MHz
Oscillation stability time 10 100 µs
Self power consumption at oscillation V
CC = 5.0 V, Topr = 25°C 400 −µA
Table 5.12 Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
fOCO-S Low-speed on-chip oscillator frequency 30 125 250 kHz
Oscillation stability time 10 100 µs
Self power consumption at oscillation V
CC = 5.0 V, Topr = 25°C 15 −µA
Table 5.13 Power Supply Circuit Timing Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
t
d(P-R) Time for internal power supply stabilization during
power-on
(2)
1 2000 µs
t
d(R-S)
STOP exit time
(3)
−−150 µs
R8C/2E Group, R8C/2F Group 5. Electrical Characteristics
Rev.1.00 Dec 14, 2007 Page 31 of 39
REJ03B0222-0100
NOTE:
1. V
CC = 4.2 to 5.5 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.14 Electrical Characteristics (1) [VCC = 5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Except P1_0 to P1_7,
XOUT
IOH = 5 mA VCC 2.0 VCC V
I
OH = 200 µAVCC 0.5 VCC V
P1_0 to P1_7 Drive capacity HIGH I
OH = 10 mA VCC 2.0 VCC V
Drive capacity LOW I
OH = 5 mA VCC 2.0 VCC V
XOUT Drive capacity HIGH I
OH = 1 mA VCC 2.0 VCC V
Drive capacity LOW I
OH = 500 µAVCC 2.0 VCC V
V
OL Output “L” voltage Except P1_0 to P1_7,
XOUT
IOL = 5 mA −−2.0 V
I
OL = 200 µA −−0.45 V
P1_0 to P1_7 Drive capacity HIGH I
OL = 10 mA −−2.0 V
Drive capacity LOW I
OL = 5 mA −−2.0 V
XOUT Drive capacity HIGH I
OL = 1 mA −−2.0 V
Drive capacity LOW I
OL = 500 µA −−2.0 V
V
T+-VT- Hysteresis
INT0
, INT1, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, RXD0, CLK0
0.1 0.5 V
RESET
0.1 1.0 V
I
IH Input “H” current VI = 5 V, VCC = 5 V −−5.0 µA
I
IL Input “L” current VI = 0 V, VCC = 5 V −−5.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 5 V 30 50 167 k
R
fXIN Feedback
resistance
XIN 1.0 M
V
RAM RAM hold voltage During stop mode 1.8 −−V

R5F212F4NFP#U0

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
16-bit Microcontrollers - MCU MCU 2.7/5V 16+2KB 32-LQFP
Lifecycle:
New from this manufacturer.
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