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NL3S2223MUTBG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2016
April, 2018 − Rev. 1
1 Publication Order Number:
NL3S2223/D
NL3S2223
High-Speed USB 2.0
(480 Mbps) DPDT Switches
The NL3S2223 is a DPDT switch optimized for high−speed
USB 2.0 applications within portable systems. It features ultra−low on
capacitance, C
ON
= 5.5 pF (typ), and a bandwidth above 950 MHz. It
is optimized for applications that use a single USB interface connector
to route multiple signal types. The C
ON
and R
ON
of both channels are
suitably low to allow the NL3S2223 to pass any speed USB data or
audio signals going to a moderately resistive terminal such as an
external headset. The device is offered in a UQFN10 1.4 mm x 1.8 mm
package.
Features
• Optimized Flow−Through Pinout
• R
ON
: 5.0 Typ @ V
CC
= 4.2 V
• C
ON
: 5.5 pF Typ @ V
CC
= 3.3 V
• V
CC
Range: 1.65 V to 4.5 V
• Typical Bandwidth: 950 MHz
• 1.4 mm x 1.8 mm x 0.50 mm UQFN10
• OVT on Common Signal Pins D+/D− up to 5.25 V
• 8 kV HBM ESD Protection on All Pins
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• High Speed USB 2.0 Data
• Mobile Phones
• Portable Devices
Figure 1. Application Diagram
NL3S2223
USB CONNECTOR
HS
USB
XCVR
FS USB
XCVR or
AUDIO
AMP
www.onsemi.comwww.onsemi.com
MARKING
DIAGRAM
U3 = Device Code
M = Date Code
G = Pb−Free Device
1
UQFN10
CASE 488AT
(Note: Microdot may be in either location)
U3 MG
G
Device Package Shipping
†
ORDERING INFORMATION
NL3S2223MUTBG UQFN10
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NL3S2223
www.onsemi.com
2
Figure 2. Pin Connections and Logic Diagram (Top View)
8
9
10
12
76
5
4
3
HSD2+
HSD2−
D+ D−
HSD1+
HSD1−
GND
OE
V
CC
S
CONTROL
Table 1. PIN DESCRIPTION
Pin Function
S Control Input
OE Output Enable
HSD1+, HSD1−, HSD2+,
HSD2−, D+, D−
Data Ports
Table 2. TRUTH TABLE
OE S
HSD1+,
HSD1−
HSD2+,
HSD2−
1
0
0
X
0
1
OFF
ON
OFF
OFF
OFF
ON
MAXIMUM RATINGS
Symbol Pins Parameter Value Unit
V
CC
V
CC
Positive DC Supply Voltage −0.5 to +5.5 V
V
IS
HSDn+, HSDn−
Analog Signal Voltage
−0.5 to V
CC
+ 0.3
V
D+, D− −0.5 to +5.25
V
IN
S, OE Control Input Voltage, Output Enable Voltage −0.5 to +5.5 V
I
CC
V
CC
Positive DC Supply Current 50 mA
T
S
Storage Temperature −65 to +150 °C
I
IS_CON
HSDn+, HSDn−,
D+, D−
Analog Signal Continuous Current−Closed Switch $300 mA
I
IS_PK
HSDn+, HSDn−,
D+, D−
Analog Signal Continuous Current 10% Duty Cycle $500 mA
I
IN
S, OE Control Input Current, Output Enable Current $20 mA
V
ESD
HBM
MM
Human Body Model
Machine Model
8
400
kV
V
I
Latchup
Latchup Performance ±100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol Pins Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 4.5 V
V
IS
HSDn+, HSDn−
Analog Signal Voltage
GND V
CC
V
D+, D− GND 4.5
V
IN
S, OE Control Input Voltage, Output Enable Voltage GND V
CC
V
T
A
Operating Temperature −40 +85 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NL3S2223
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
CONTROL INPUT, OUTPUT ENABLE VOLTAGE (Typical: T = 25°C)
Symbol
Pins Parameter Test Conditions V
CC
(V)
−40°C to +85°C
Unit
Min Typ Max
V
IH
S, OE Control Input, Output
Enable HIGH Voltage
(See Figure 11)
2.7
3.3
4.2
1.25
1.3
1.4
− − V
V
IL
S, OE Control Input, Output
Enable LOW Voltage
(See Figure 11)
2.7
3.3
4.2
− − 0.35
0.4
0.5
V
I
IN
S, OE Current Input, Output
Enable Leakage Current
0 ≤ V
IS
≤ V
CC
1.65 − 4.5 − − ±0.1
A
SUPPLY CURRENT AND LEAKAGE (Typical: T = 25°C, V
CC
= 3.3 V)
Symbol
Pins Parameter Test Conditions V
CC
(V)
−40°C to +85°C
Unit
Min Typ Max
I
CC
V
CC
Quiescent Supply Current 0 ≤ V
IS
≤ V
CC
; I
D
= 0 A
0 ≤ V
IS
≤ V
CC
− 0.5 V
1.65 − 3.6
3.6 − 4.5
−
−
−
−
0.1
0.1
A
I
OZ
OFF State Leakage 0 ≤ V
IS
≤ V
CC
1.65 − 4.5 − ±0.1 ±0.5
A
I
OFF
D+, D− Power OFF Leakage
Current
0 ≤ V
IS
≤ V
CC
0 − − ±0.5
A
LIMITED V
IS
SWING ON RESISTANCE (Typical: T = 25°C)
Symbol Pins Parameter Test Conditions V
CC
(V)
−40°C to +85°C
Unit
Min Typ Max
R
ON
On−Resistance (Note 1) I
ON
= 8 mA
V
IS
= 0 V to 0.4 V
2.7
3.3
4.2
− 6.0
5.5
5.0
8.6
7.6
7.0
R
FLAT
On−Resistance Flatness
(Notes 1 and 2)
I
ON
= 8 mA
V
IS
= 0 V to 0.4 V
2.7
3.3
4.2
− 0.55
0.30
0.20
−
R
ON
On−Resistance Matching
(Notes 1 and 3)
I
ON
= 8 mA
V
IS
= 0 V to 0.4 V
2.7
3.3
4.2
− 0.60
0.60
0.60
−
1. Guaranteed by design.
2. Flatness is defined as the difference between the maximum and minimum value of On−Resistance as measured over the specified analog
signal ranges.
3. R
ON
= R
ON(max)
− R
ON(min)
between HSD1
+
and HSD1
−
or HSD2
+
and HSD2
−
.
FULL V
IS
SWING ON RESISTANCE (Typical: T = 25°C)
Symbol
Pins Parameter Test Conditions V
CC
(V)
−40°C to +85°C
Unit
Min Typ Max
R
ON
On−Resistance I
ON
= 8 mA
V
IS
= 0 V to V
CC
2.7
3.3
4.2
− 10
8.0
7.0
13.5
9.75
8.50
R
FLAT
On−Resistance Flatness
(Notes 4 and 5)
I
ON
= 8 mA
V
IS
= 0 V to V
CC
2.7
3.3
4.2
− 4.5
3.0
2.5
−
R
ON
On−Resistance
(Note 4 and 6)
I
ON
= 8 mA
V
IS
= 0 V to V
CC
2.7
3.3
4.2
− 0.60
0.60
0.60
−
4. Guaranteed by design.
5. Flatness is defined as the difference between the maximum and minimum value of On−Resistance as measured over the specified analog
signal ranges.
6. R
ON
= R
ON(max)
− R
ON(min)
between HSD1
+
and HSD1
−
or HSD2
+
and HSD2
−
.
P1-P3P4-P6P7-P9P10-P10

NL3S2223MUTBG

Mfr. #:
Buy NL3S2223MUTBG
Manufacturer:
ON Semiconductor
Description:
USB Switch ICs DPDT USB ANALOG SWITCH
Lifecycle:
New from this manufacturer.
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