NL3S2223
www.onsemi.com
4
AC ELECTRICAL CHARACTERISTICS
TIMING/FREQUENCY (Typical: T = 25°C, V
CC
= 3.3 V, R
L
= 50 , C
L
= 35 pF, f = 1 MHz)
Symbol
Pins Parameter Test Conditions V
CC
(V)
−405C to +855C
Unit
Min Typ Max
t
ON
Closed to Open Turn−ON Time
(See Figures 4 and 5)
1.65 − 4.5 − 13.0 30.0 ns
t
OFF
Open to Closed Turn−OFF Time
(See Figures 4 and 5)
1.65 − 4.5 − 12.0 25.0 ns
T
BBM
Break−Before−Make
Time (See Figure 3)
1.65 − 4.5 2.0 − − ns
BW −3 dB Bandwidth
(See Figure 10)
C
L
= 5 pF 1.65 − 4.5 − 950 − MHz
ISOLATION (Typical: T = 25°C, V
CC
= 3.3 V, R
L
= 50 , C
L
= 5 pF)
Symbol
Pins Parameter Test Conditions V
CC
(V)
−405C to +855C
Unit
Min Typ Max
O
IRR
Open OFF−Isolation
(See Figure 6)
f = 240 MHz 1.65 − 4.5 − −22 − dB
X
TALK
HSDn+ to HSDn− Non−Adjacent Channel
Crosstalk
f = 240 MHz 1.65 − 4.5 − −24 − dB
CAPACITANCE (Typical: T = 25°C, V
CC
= 3.3 V, R
L
= 50 , C
L
= 5 pF)
Symbol
Pins Parameter Test Conditions
−405C to +855C
Unit
Min Typ Max
C
IN
S, OE Control Pin, Output Enable
Input Capacitance
V
CC
= 0 V, f = 1 MHz − 1.5 −
pF
V
CC
= 0 V, f = 10 MHz − 1.0 −
C
ON
D+ to
HSD1+ o
HSD2+
ON Capacitance
V
CC
= 3.3 V; OE = 0 V, f = 1 MHz
S = 0 V or 3.3 V
− 5.5 −
V
CC
= 3.3 V; OE = 0 V, f = 10 MHz
S = 0 V or 3.3 V
− 5.5 −
V
CC
= 3.3 V; OE = 0 V, f = 240 MHz
S = 0 V or 3.3 V
− 5 −
C
OFF
HSD1n o
HSD2n
OFF Capacitance
V
CC
= V
IS
= 3.3 V;
OE
= 3.3 V or (OE = 0 V, S = 3.3 V or 0 V),
f = 1 MHz
− 3.8 −
pF
V
CC
= V
IS
= 3.3 V;
OE
= 3.3 V or (OE = 0 V, S = 3.3 V or 0 V),
f = 10 MHz
− 2.0 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
