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IRFR3504PBF

P1-P3P4-P6P7-P9P10-P11
IRFR3504PbF
IRFU3504PbF
HEXFET
®
Power MOSFET
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.09
R
θJA
Junction-to-Ambient (PCB mount) ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 9.2mΩ
I
D
= 30A
09/21/10
www.irf.com 1
HEXFET(R) is a registered trademark of International Rectifier.
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this product are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
D-Pak
IRFR3504PbF
I-Pak
IRFU3504PbF
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon limited) 87
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (See Fig.9) 61 A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package limited) 30
I
DM
Pulsed Drain Current 350
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 240 mJ
E
AS
(tested) Single Pulse Avalanche Energy Tested Value 480
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Lead-Free
PD - 95315B
IRFR/U3504PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 30A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 53 80 ns T
J
= 25°C, I
F
= 30A, V
DD
= 20V
Q
rr
Reverse Recovery Charge ––– 86 130 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
Source-Drain Ratings and Characteristics
87
350
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.8 9.2 mΩ V
GS
= 10V, I
D
= 30A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= 10V, I
D
= 250µA
g
fs
Forward Transconductance 40 ––– ––– S V
DS
= 10V, I
D
= 30A
––– ––– 20
µA
V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– 48 71 I
D
= 30A
Q
gs
Gate-to-Source Charge ––– 12 18 nC V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 13 20 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 20V
t
r
Rise Time ––– 53 ––– I
D
= 30A
t
d(off)
Turn-Off Delay Time ––– 36 ––– R
G
= 6.8Ω
t
f
Fall Time ––– 22 ––– V
GS
= 10V
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 2150 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 580 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 2830 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 510 ––– V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 870 ––– V
GS
= 0V, V
DS
= 0V to 32V
S
D
G
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
IRFR/U3504PbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS
, Gate-to-Source Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
20µs PULSE WIDTH
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0 20 40 60 80 100 120
I
D
,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
80
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
20µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRFR3504PBF

Mfr. #:
Buy IRFR3504PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 30A DPAK
Lifecycle:
New from this manufacturer.
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