Philips Semiconductors
2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 2 of 13
9397 750 07153
© Philips Electronics N.V. 2000. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 60 V
I
D
drain current (DC) T
amb
=25°C; V
GS
=10V − 300 mA
P
tot
total power dissipation T
amb
=25°C − 0.83 W
T
j
junction temperature − 150 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 500 mA 2.8 5 Ω
V
GS
= 4.5 V; I
D
= 75 mA 3.8 5.3 Ω
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 60 V
V
DGR
drain-gate voltage (DC) T
j
=25to150°C; R
GS
=20kΩ−60 V
V
GS
gate-source voltage (DC) −±30 V
V
GSM
peak gate-source voltage t
p
≤ 50 µs; pulsed; duty cycle = 25% −±40 V
I
D
drain current (DC) T
amb
=25°C; V
GS
=10V;
Figure 2 and 3
− 300 mA
T
amb
= 100 °C; V
GS
=10V;Figure 2 − 190 mA
I
DM
peak drain current T
amb
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
− 1.3 A
P
tot
total power dissipation T
amb
=25°C; Figure 1 − 0.83 W
T
stg
storage temperature −55 +150 °C
T
j
operating junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
amb
=25°C − 300 mA
I
SM
peak source (diode forward) current T
amb
=25°C; pulsed; t
p
≤ 10 µs − 1.3 A
