Philips Semiconductors
2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 6 of 13
9397 750 07153
© Philips Electronics N.V. 2000. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
≥ I
D
× R
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
03aa04
0
0.2
0.4
0.6
0.8
1
0 0.4 0.8 1.2 1.6 2
3.5 V
T
j
= 25
o
C
4 V
4.5 V
3 V
V
DS
(V)
I
D
(A)
V
GS
= 10 V
03aa06
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
01234567
V
DS
> I
D
X R
DSon
T
j
= 25
o
C
150
o
C
I
D
(A)
V
GS
(V)
03aa05
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
T
j
= 25
o
C
4.5 V
4 V
3.5V
3 V
R
DSon
(Ω)
V
GS
= 10 V
I
D
(A)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60 -20 20 60 100 140 180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
