SI7430DP-T1-E3 Datasheet SI7430DP-T1-GE3, SI7430DP-T1-E3 | P1-P3

Vishay Siliconix

Si7430DP

Document Number: 74282

S11-0212-Rev. C, 14-Feb-11

www.vishay.com

1

N-Channel 150 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Extremely Low Q

gd

for Reduced dV/dt, Q

gd

and

Shoot-Through

• 100 % R

g

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Primary Side Switch

• Single-Ended Power Switch

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a

Q

g

(Typ.)

150

0.045 at V

GS

= 10 V

26

23 nC

0.047 at V

GS

= 8 V

25

Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free)

Si7430DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N

-Channel MOSFET

G

D

S

Notes:

a. Based on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

150

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

26

A

T

C

= 70 °C

21

T

A

= 25 °C

7.2

b, c

T

A

= 70 °C

5.7

b, c

Pulsed Drain Current

I

DM

50

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

32

T

A

= 25 °C

4.5

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

20

Single Pulse Avalanche Energy

E

AS

20

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

64

W

T

C

= 70 °C

44

T

A

= 25 °C

5.2

b, c

T

A

= 70 °C

3.3

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

R

thJA

19 24

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

1.5 1.8

www.vishay.com

2

Document Number: 74282

S11-0212-Rev. C, 14-Feb-11

Vishay Siliconix

Si7430DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %

a. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

150 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

172

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

- 10

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

2.5 4.5 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 150 V, V

GS

= 0 V

1

µA

V

DS

= 150 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 10 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 5 A

0.036 0.045

Ω

V

GS

= 8 V, I

D

= 5 A

0.0375 0.047

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 5 A

23 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 50 V, V

GS

= 0 V, f = 1 MHz

1735

pFOutput Capacitance

C

oss

160

Reverse Transfer Capacitance

C

rss

37

Total Gate Charge

Q

g

V

DS

= 75 V, V

GS

= 10 V, I

D

= 5 A

28.5 43

nC

V

DS

= 75 V, V

GS

= 8 V, I

D

= 5 A

23 35

Gate-Source Charge

Q

gs

8

Gate-Drain Charge

Q

gd

6.5

Gate Resistance

R

g

f = 1 MHz 0.85 1.3 Ω

Turn-on Delay Time

t

d(on)

V

DD

= 50 V, R

L

= 10 Ω

I

D

≅ 5 A, V

GEN

= 10 V, R

g

= 1 Ω

14 21

ns

Rise Time

t

r

12 18

Turn-Off Delay Time

t

d(off)

22 33

Fall Time

t

f

610

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 50 V, R

L

= 10 Ω

I

D

≅ 5 A, V

GEN

= 8 V, R

g

= 1 Ω

16 24

Rise Time

t

r

12 18

Turn-Off Delay Time

t

d(off)

20 30

Fall Time

t

f

712

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

32

A

Pulse Diode Forward Current

a

I

SM

50

Body Diode Voltage

V

SD

I

S

= 3 A

0.77 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 5 A, dI/dt = 100 A/µs, T

J

= 25 °C

63 95 ns

Body Diode Reverse Recovery Charge

Q

rr

110 165 nC

Reverse Recovery Fall Time

t

a

49

ns

Reverse Recovery Rise Time

t

b

14

Document Number: 74282

S11-0212-Rev. C, 14-Feb-11

www.vishay.com

3

Vishay Siliconix

Si7430DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

12

24

36

48

60

012345

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

V = 10 V thru 7 V

V = 6 V

V = 5 V

GS

0.035

0.039

0.043

0.047

0.051

0

.

0

55

0 102030405060

I

D

- Drain Current (A)

V

GS

= 10 V

R

)no(SD

(Ω) ecnatsis

e

R-nO

-

V

GS

= 8 V

0

2

4

6

8

10

0 6 12 18 24 30

I

D

= 5 A

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 50 V

V

DS

= 100 V

V

DS

= 75 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.3

0.6

0.9

1.2

02468 10

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

0

400

800

1200

1600

2000

020406080 100

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

0.5

0.9

1.3

1.7

2.1

2

.5

- 50 - 25 0 25 50 75 100 125 150

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

I

D

= 5 A

V

GS

= 8 V

V

GS

= 10 V

SI7430DP-T1-E3

SI7430DP-T1-E3

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