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SI7430DP-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
Vishay Siliconix
Si7430DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
0.01
0.001
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
1.2
10.80.60.40.20
100
10
1
T
J
= 25 °C
T
J
= 150 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.04
0.08
0.12
0.16
0.20
02468 10
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
J
= 25 °C
T
J
= 125 °C
I
D
= 5 A
)W(
rewoP
Time (s)
0
40
80
120
160
200
0.001 0.01 0.1 1 10
Safe Operating Area, Junction-to-Ambient
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
0.01
10
I
D
- Drain Current (A)
0.1
V
DS
- Drain-to-Source Voltage (V)
1
0.01
0.1
1
10
100
1000
Limited by R
DS(on)
*
T
A
= 25 °C
Single Pulse
1 s
10 s
DC
10 ms
100 ms
1 ms
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
5
Vishay Siliconix
Si7430DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
6
12
18
24
30
0 255075100125150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
0
17
34
51
68
85
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
)
W
(
r
e
w
o
P
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2
.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
)
W
(
r
e
w
o
P
www.vishay.com
6
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
Vishay Siliconix
Si7430DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74282
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
10
-1
100
Square Wave Pulse Duration (s)
10
1000
1
0.1
0.01
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
ecnadepmI lamrehT
1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Notes:
t
1
P
DM
t
2
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
1
0.1
0.01
Square Wave Pulse Duration (s)
t n e i s n a r T e
v
i t c
e
f f E
d
e z i l
a m
r
o N
ecnade
p
mI l
a
mre
h
T
-4
1
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
0.02
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7430DP-T1-E3

Mfr. #:
Buy SI7430DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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