10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/13/2007
IS62WV51216ALL, IS62WV51216BLL
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 , CS2 and WE inputs and at
least one of the LB and UB inputs being in the LOW state.
2. WRITE = (CS1) [ (LB) = (UB) ] (WE).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(CS1 Controlled, OE = HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
LB, UB
t
PWB
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
45ns 55 ns 70 ns
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
tWC Write Cycle Time 45 55 70 ns
tSCS1/tSCS2 CS1/CS2 to Write End 35 45 60 ns
tAW Address Setup Time to Write End 35 45 60 ns
tHA Address Hold from Write End 0 0 0 ns
tSA Address Setup Time 0 0 0 ns
tPWB LB, UB Valid to End of Write 35 45 60 ns
tPWE
(4)
WE Pulse Width 35 40 50 ns
tSD Data Setup to Write End 20 25 30 ns
tHD Data Hold from Write End 0 0 0 ns
tHZWE
(3)
WE LOW to High-Z Output 20 20 30 ns
tLZWE
(3)
WE HIGH to Low-Z Output 5 5 5 ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1.
2.
The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to
terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4. t
PWE
> tHZWE + tSD when OE is LOW.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
11
Rev. D
12/13/2007
IS62WV51216ALL, IS62WV51216BLL
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
OE
CS1
CS2
WE
LB, UB
DOUT
DIN
DATA-IN VALID
DATA UNDEFINED
t
WC
tSCS1
tSCS2
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWE
tSA
tSD tHD
ADDRESS
OE
CS1
CS2
WE
LB, UB
DOUT
DIN
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/13/2007
IS62WV51216ALL, IS62WV51216BLL
WRITE CYCLE NO. 4 (UB/LB Controlled)
DATA UNDEFINED
t
WC
ADDRESS 1 ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
t
HD
t
SA
t
HZWE
ADDRESS
CS1
UB, LB
WE
D
OUT
DIN
OE
DATA
IN
VALID
t
LZWE
t
SD
t
PBW
DATA
IN
VALID
t
SD
t
HD
t
SA
t
HA
t
HA
UB_CSWR4.eps
HIGH
CS2

IS62WV51216ALL-70BI

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Manufacturer:
ISSI
Description:
SRAM 8Mb 512Kx16 70ns Async SRAM
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