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ZDT694TA

P1-P3P4-P6P7-P7
ZDT694
Document number: DS33200 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZDT694
A Product Line of
Diodes Incorporated
120V DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8
Features
• BV
CEO
> 120V
• I
C
= 0.5A High Continuous Current
• High Gain > 400 @ 200mA
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SM-8 (8 LEAD SOT223)
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.117 grams (Approximate)
Ordering Information
(Notes 4 and 5)
Part Number
Compliance
Reel size (inches)
Tape width (mm)
Quantity per reel
ZDT694TA AEC-Q101 T694 7 12 1,000
ZDT694QTA Automotive T694 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
Top View
Pin Out
Top View
SM-8
Green
T694 = Product Type Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 4 = 2014)
WW = Week Code 01-52
SM-8
ZDT694
Document number: DS33200 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZDT694
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol NPN Unit
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
7
V
Continuous Collector Current
I
C
0.5
A
Peak Pulse Current (Note 5)
I
CM
1
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector Power Dissipation
(Note 5)
P
D
2.25
W
(Note 6) 2.75
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
55.6
°C/W
(Note 6) 45.5
Thermal Resistance, Junction to Leads (Note 7)
R
θJL
30.7 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device with any single die active and mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB;
device is measured under still air conditions whilst operating in steady-state.
6. Same as Note 5, except both die are active and equally sharing power.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZDT694
Document number: DS33200 Rev. 2 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZDT694
A Product Line of
Diodes Incorporated
Thermal Characteristics and Derating Information
0.1 1 10
10m
100m
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
100µ 1m 10m 100m 1 10 100 1k
1
10
100
0.1 1 10
10m
100m
1
10
100us
100ms
1s
R
CE(SAT)
Limited
1ms
NPN Safe Operating Area
One active die
Single Pulse
T
amb
=25°C
DC
10ms
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
One active die
Two active die
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Maximum Power (W)
Pulse Width (s)
One active die
Single Pulse
T
amb
=25°C
1s
DC
100us
1ms
10ms
100ms
R
CE(SAT)
Limited
PNP Safe Operating Area
-V
CE
Collector-Emitter Voltage (V)
-I
C
Collector Current (A)
P1-P3P4-P6P7-P7

ZDT694TA

Mfr. #:
Buy ZDT694TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT Dual NPN Medium Power
Lifecycle:
New from this manufacturer.
Delivery:
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