ZDT694
Document number: DS33200 Rev. 2 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
120 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
120 — — V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
E
= 100µA
Collector Cutoff Current
I
CBO
— — 0.1 µA
V
CB
= 100V
Emitter Cutoff Current
I
EBO
— — 0.1 µA
V
EB
= 5.6V
DC current transfer Static ratio (Note 8)
h
FE
500 —
—
—
I
C
= 150mA, V
CE
= 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 400mA, V
CE
= 2V
400 — —
150 —
—
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
— — 0.25
V
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 0.4A, I
B
= 5mA
— — 0.50
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
— — 0.9 V
I
C
= 1A, I
B
= 10mA
Base-Emitter Turn-on Voltage (Note 9)
V
BE(on)
— — 0.9 V
I
C
= 1A, V
CE
= 2V
Transitional Frequency
f
T
130 — — MHz
I
C
= 50mA, V
CE
= 5V,
f = 50MHz
Input Capacitance
C
ibo
— 200 — pF
V
EB
= 0.5V, f = 1MHz,
Output Capacitance
C
obo
— 9 — pF
V
EB
= 10V, f = 1MHz,
Switching Time
t
on
—
80
—
ns
V
CC
= 50V, I
C
= 100mA,
I
B1
= -I
B2
= 10mA
t
off
2900 ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
