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BYV410X-600,127

P1-P3P4-P6P7-P9P10-P11
BYV410X-600_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 29 June 2009 3 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aad262
0
6
12
18
24
0
57 15
I
F(AV)
(A)
P
tot
(W)
δ = 1
0.5
0.2
0.1
003aad263
0
6
12
18
24
0510
I
F(AV)
(A)
P
tot
(W)
a = 180
°
120
90
60
30
BYV410X-600_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 29 June 2009 4 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
5. Thermal characteristics
6. Isolation characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance from
junction to heatsink
with heatsink compound; per diode;
see Figure 3
--5K/W
with heatsink compound; both diodes
conducting
--3K/W
R
th(j-a)
thermal resistance from
junction to ambient free air
-55-K/W
Fig 3. Transient thermal impedance from junction to heatsink per diode as a function of pulse width
001aaf033
1
10
−1
10
Z
th(j-h)
(K/W)
10
−3
10
−2
t
p
(s)
10
−6
10110
−1
10
−5
10
−3
10
−2
10
−4
t
p
t
p
T
P
t
T
δ =
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal waveform;
relative humidity < 65 %; clean and dust
free; from all terminals to external heatsink
--2500V
C
isol
isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF
BYV410X-600_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 29 June 2009 5 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
=10A; T
j
= 25 °C; see Figure 4 -1.42.1V
I
F
=10A; T
j
= 150 °C - 1.3 1.9 V
I
R
reverse current V
R
=600V; T
j
= 100 °C - 0.7 1.5 mA
V
R
=600V; T
j
= 25 °C - 10 50 µA
Dynamic characteristics
Q
r
recovered charge I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/µs - 15 28 nC
t
rr
reverse recovery time I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/µs;
T
j
=25°C; see Figure 5
-2035ns
I
RM
peak reverse recovery
current
I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/µs;
see Figure 5
-1.41.9A
V
FR
forward recovery
voltage
I
F
=1A; dI
F
/dt = 100 A/µs; see Figure 6 -3.2-V
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
003aad261
0
4
8
12
0123
V
F
(V)
I
F
(A)
(1) (2) (3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
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BYV410X-600,127

Mfr. #:
Buy BYV410X-600,127
Manufacturer:
WeEn Semiconductors
Description:
Diodes - General Purpose, Power, Switching DIODE RECT UFAST DL 600V
Lifecycle:
New from this manufacturer.
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