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BYV410X-600,127
P1-P3
P4-P6
P7-P9
P10-P11
BYV410X-600_1
© NXP B.V
. 2009. Al
l rights reserved.
Product data sheet
Rev
. 01 — 29 June 2009
6 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafas
t dual rectifier diode
Fig 6.
Forward recov
ery definitions
001aab912
time
time
V
FRM
V
F
I
F
V
F
BYV410X-600_1
© NXP B.V
. 2009. Al
l rights reserved.
Product data sheet
Rev
. 01 — 29 June 2009
7 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafas
t dual rectifier diode
8.
Package outline
Fig 7.
Package outline SOT1
86A (TO-220F)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT186A
3-lead TO-220F
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186
A
A
A
1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are
∅
2.5
×
0.8 max. depth
D
D
1
L
L
2
L
1
b
1
b
2
e
1
e
b
w
M
1
23
q
E
P
T
UNIT
D
b
1
D
1
e
q
Q
P
L
c
L
2
(1)
max.
e
1
A
5.08
3
mm
4.6
4.0
A
1
2.9
2.5
b
0.9
0.7
1.1
0.9
b
2
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5
0.4
L
1
3.30
2.79
j
2.7
1.7
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
02-04-09
06-02-14
mounting
base
BYV410X-600_1
© NXP B.V
. 2009. Al
l rights reserved.
Product data sheet
Rev
. 01 — 29 June 2009
8 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafas
t dual rectifier diode
9.
Revision history
T
able 8.
Revision history
Document ID
Release date
Dat
a sheet status
Change notice
Supersedes
BYV410X-600_1
20090629
Pr
oduct data sheet
-
-
P1-P3
P4-P6
P7-P9
P10-P11
BYV410X-600,127
Mfr. #:
Buy BYV410X-600,127
Manufacturer:
WeEn Semiconductors
Description:
Diodes - General Purpose, Power, Switching DIODE RECT UFAST DL 600V
Lifecycle:
New from this manufacturer.
Delivery:
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BYV410X-600,127