Data Sheet ADG5212/ADG5213
Rev. A | Page 5 of 20
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS V
DD
= +22 V, V
SS
= −22 V
I
DD
50 µA typ Digital inputs = 0 V or V
DD
70 110 µA max
I
SS
0.001 µA typ Digital inputs = 0 V or V
DD
V
DD
/V
SS
±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V max
On Resistance, R
ON
350 Ω typ V
S
= 0 V to 10 V, I
S
= −1 mA,
see Figure 24
DD
SS
On-Resistance Match Between Channels, ∆R
ON
4 Ω typ V
S
= 0 V to 10 V, I
S
= −1 mA
20 21 22 Ω max
On-Resistance Flatness, R
FLAT(ON)
160 Ω typ V
S
= 0 V to 10 V, I
S
= −1 mA
280 335 370 Ω max
LEAKAGE CURRENTS V
DD
= 13.2 V, V
SS
= 0 V
Source Off Leakage, I
S
(Off) 0.01 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V,
see Figure 23
0.1 0.2 0.4 nA max
D
S
D
see Figure 23
0.1 0.2 0.4 nA max
Channel On Leakage, I
D
(On), I
S
(On) 0.02 nA typ V
S
= V
D
= 1 V/10 V,
see Figure 26
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 µA typ V
IN
= V
GND
or V
DD
±0.1 µA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
ON
L
L
290 360 410 ns max V
S
= 8 V, see Figure 30
t
OFF
165 ns typ R
L
= 300 Ω, C
L
= 35 pF
205 235 260 ns max V
S
= 8 V, see Figure 30
Break-Before-Make Time Delay, t
D
(ADG5213 Only)
85 ns typ R
L
= 300 Ω, C
L
= 35 pF
50 ns min V
S1
= V
S2
= 8 V, see Figure 29
Charge Injection, Q
INJ
−0.5 pC typ V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF,
see Figure 31
Off Isolation −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
see Figure 25
Channel-to-Channel Crosstalk −105 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
see Figure 27
−3 dB Bandwidth 340 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see
Figure 28
