IRL3803VPBF

IRL3803VPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET
®
power MOSFETs
IRL3803VPbF
8 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
TO-220AB package is not recommended for Surface Mount Application.
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
T H IS IS AN IR F1010
LOT CODE 1789
AS S EMB L E D ON WW 19, 1997
PART NUMBER
ASSEMBLY
LOT CODE
DAT E CODE
YEAR 7 = 1997
LINE C
WE E K 19
LOGO
R E CTIF IE R
INT ER NAT IONAL
Note: "P" in assembly line
position indicates "Lead-Free"
TO-220AB Package Outline
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

IRL3803VPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 140A 50.7nC 5.5mOhm LogLvAB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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