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DG200BDJ-E3

P1-P3P4-P6
Vishay Siliconix
DG200B
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
www.vishay.com
1
Monolithic Dual SPST CMOS Analog Switch
FEATURES
• ± 15 V Input Signal Range
• 44 V Maximum Supply Ranges
• On-Resistance: 45 Ω
• TTL and CMOS Compatibility
BENEFITS
• Wide Dynamic Range
• Simple Interfacing
• Reduced External Component Count
APPLICATIONS
• Servo Control Switching
• Programmable Gain Amplifiers
• Audio Switching
• Programmable Filters
DESCRIPTION
The DG200B is a dual, single-pole, single-throw analog
switch designed to provide general purpose switching of
analog signals. This device is ideally suited for designs
requiring a wide analog voltage range coupled with low
on-resistance.
The DG200B is designed on Vishay Siliconix’ improved
PLUS-40 CMOS process. An epitaxial layer prevents
latchup.
Each switch conducts equally well in both directions when
on, and blocks up to 30 V peak-to-peak when off. In the on
condition, this bi-directional switch introduces no offset
voltage of its own.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
IN
2
IN
1
NC NC
GND V+ Substrate
NC
NC
S
2
D
1
D
2
S
1
V– NC
Plastic Dip
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
TRUTH TABLE
Logic Switch
0ON
1OFF
ORDERING INFORMATION
Temp Range Package Part Number
- 40 to 85 °C 14-Pin Plastic DIP
DG200BDJ
DG200BDJ-E3
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
Vishay Siliconix
DG200B
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 25 °C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
ABSOLUTE MAXIMUM RATINGS T
A
= 25°C, unless otherwise noted
Parameter Limit Unit
V+ to V- 44
V
GND to V- 25
Digital Inputs
a
, V
S
, V
D
(V-) - 2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Current (Any Terminal) Continuous 30
mA
Current S or D (Pulsed at 1 ms, 10 % Duty Cycle Max) 100
Storage Temperature - 65 to 150 °C
Power Dissipation (Package)
b
14-Pin Plastic DIP
c
470 mW
Figure 1.
D
X
S
X
V+
IN
X
V-
Level
Shift/
GND
V+
V-
Drive
V
L
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
www.vishay.com
3
Vishay Siliconix
DG200B
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Limits
- 40 to 85 °C
Unit Min
c
Typ
d
Max
c
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 V
Drain-Source On-Resistance
r
DS(on)
V
D
= ± 10 V, I
S
= - 1 mA
Room
Full
45
85
100
Ω
Source Off Leakage Current
I
S(off)
V
S
= ± 14 V, V
D
= 14 V
Room
Full
- 2
- 100
± 0.01
2
100
nADrain Off Leakage Current
I
D(off)
V
D
= ± 14 V, V
S
= 14 V
Room
Full
- 2
- 100
± 0.01
2
100
Channel On Leakage Current
f
I
D(on)
V
S
= V
D
= ± 14 V
Room
Full
- 2
- 200
± 0.1
2
200
Digital Control
Input Current with
Input Voltage High
I
INH
V
IN
= 2.4 V
Room
Full
- 0.5
- 1
0.0009
µA
V
IN
= 15 V
Room
Full
0.005 0.5
1
Input Current with
Input Voltage Low
I
INL
V
IN
= 0 V
Room
Full
- 0.5
- 1
- 0.0015
Dynamic Characteristics
Tu r n - On T im e
t
ON
See Switching Time Test Circuit
Room 300 1000
ns
Turn-Off Time
t
OFF
Room 200 425
Charge Injection Q
C
L
= 1000 pF, R
g
= 0 Ω, V
g
= 0 V
Room 1 pC
Source Off Capacitance
C
S(off)
f = 140 kHz
V
IN
= 5 V
V
S
= 0 V
Room 5
pF
Drain Off Capacitance
C
D(off)
V
D
= 0 V
Room 5
Channel-On Capacitance
C
D(on)
+
C
S(on)
V
S
= V
D
= 0 V, V
IN
= 0 V
Room 16
Off Isolation OIRR
V
IN
= 5 V, R
L
= 75 Ω
V
S
= 2 V, f = 1 MHz
Room 90
dB
Crosstalk (Channel-to-Channel)
X
TA LK
Room 95
Power Supplies
Positive Supply Current I+
Both Channels On or Off
V
IN
= 0 V and 5.0 V
Room 50
µA
Negative Supply Current I- Room - 10
±
±
P1-P3P4-P6

DG200BDJ-E3

Mfr. #:
Buy DG200BDJ-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs NUAL SPST ANALOG SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
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