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DG200BDJ-E3

P1-P3P4-P6
www.vishay.com
4
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
Vishay Siliconix
DG200B
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
TEST CIRCUITS
V
O
is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge
of output waveform.
r
DS(on)
vs. V
D
and Power Supply Voltages
Leakage Current vs. Temperature
- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20
40
50
60
70
80
90
100
110
± 5 V
V
D
- Drain Voltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
r
DS(on)
- Drain-Source On-Resistance (Ω)
-55 25 455-15 65
1 nA
100 pA
10 pA
-35
1 pA
85 105 125
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S(off)
, I
D(off)
I
S,
I
D
- Current
Temperature (°C)
r
DS(on)
vs. V
D
and Temperature
Leakage Currents vs. Analog Voltage
85 °C
0
10
20
30
40
50
-15 -10 -5 0 5 10 15
V
D
- Drain Voltage (V)
125 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
60
70
80
90
100
r
DS(on)
-
-20 -15 -10 -5 0 5 10 15 20
40
20
0
-
20
-
40
I
S,
I
D
- Current (pA)
I
S(off)
, I
D(off)
I
D(on)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
30
10
-
10
-
30
Figure 2. Switching Time
50 %
0 V
3 V
t
OFF
t
ON
V
O
V
S
t
r
< 20 ns
t
f
< 20 ns
Logic
Input
Switch
Input
Switch
Output
90 %
C
L
35 pF
R
L
1 kΩ
V
O
= V
S
R
L
+ r
DS(on)
R
L
V
S
= + 5 V
V
O
V-
V+
IN
S
D
3 V
- 15 V
GND
+ 15 V
Document Number: 71357
S-71155–Rev. C, 11-Jun-07
www.vishay.com
5
Vishay Siliconix
DG200B
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71357.
Figure 3. Charge Injection
C
L
1000 pF
V
g
3 V
D
V+
V-
R
g
- 15 V
GND
IN
S
V
O
+ 15 V
V
O
ΔV
O
IN
X
ON ONOFF
ΔV
O
= measured voltage error due to charge injection
The charge injection in coulombs is
ΔQ = C
L
x ΔV
O
Figure 4. Off Isolation
S
IN
R
L
D
R
g
= 50 Ω
V
S
V
O
5 V
Off Isolation = 20 log
V
S
V
O
V+
- 15 V
GND V-
C
C
+ 15 V
Figure 5. Channel-to-Channel Crosstalk
IN
1
0 V
V
O
+ 15 V
- 15 V
GND
R
L
V+
V-
NC
X
TA LK
= 20 log
C
V
S
C
V
O
0 V
50 Ω
V
S
S
1
IN
2
S
2
R
g
= 50 Ω
D
1
D
2
C = RF bypass
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
P1-P3P4-P6

DG200BDJ-E3

Mfr. #:
Buy DG200BDJ-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs NUAL SPST ANALOG SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
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