2004 Dec 09 3
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BST50 − 60 V
BST51 − 80 V
BST52 − 90 V
V
CES
collector-emitter voltage V
BE
=0V
BST50 − 45 V
BST51 − 60 V
BST52 − 80 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 1A
I
CM
peak collector current − 2A
I
B
base current (DC) − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.3 W
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 96 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
