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BST52,135

P1-P3P4-P6P7-P8
2004 Dec 09 4
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
collector-emitter cut-off current
BST50 V
BE
=0V; V
CE
=45V −−50 nA
BST51 V
BE
=0V; V
CE
=60V −−50 nA
BST52 V
BE
=0V; V
CE
=80V −−50 nA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
=4V −−50 nA
h
FE
DC current gain V
CE
= 10 V; note 1; (see Fig.2)
I
C
= 150 mA 1000 −−
I
C
= 500 mA 2000 −−
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA −−1.3 V
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150 °C
−−1.3 V
V
BEsat
base-emitter saturation voltage I
C
= 500 mA; I
B
= 0.5 mA −−1.9 V
f
T
transition frequency I
C
= 500 mA; V
CE
=5V;
f = 100 MHz
− 200 − MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
= −0.5 mA
− 400 − ns
t
off
turn-off time − 1500 − ns
2004 Dec 09 5
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10
−1
1
I
C
(mA)
h
FE
10 10
2
10
3
V
CE
=10V.
Fig.3 Test circuit for switching times.
n
dbook, full pagewidth
R
C
R2
R1
DUT
MLB826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
i
V
CC
V
i
= 10 V; T = 200 µs; t
p
=6µs; t
r
=t
f
≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; R
B
=10kΩ; R
C
=18Ω.
V
BB
= −1.8 V; V
CC
= 10.7 V.
Oscilloscope: input impedance Z
i
=50Ω.
2004 Dec 09 6
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62
99-09-13
04-08-03
w M
e
1
e
E
H
E
B
0 2 4 mm
scale
b
p3
b
p2
b
p1
c
D
L
p
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
H
E
L
p
4.25
3.75
e
3.0
w
0.13
e
1
1.5
1.2
0.8
b
p2
b
p1
0.53
0.40
b
p3
1.8
1.4
P1-P3P4-P6P7-P8

BST52,135

Mfr. #:
Buy BST52,135
Manufacturer:
Nexperia
Description:
Darlington Transistors TRANS DARLINGTON
Lifecycle:
New from this manufacturer.
Delivery:
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