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IRF8301MTRPBF

P1-P3P4-P6P7-P9P10-P10
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
4
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 20135
Fig 6. Typical Output Characteristics
Fig 5. Typical Output Characteristics
Fig 7. Typical Transfer Characteristics
Fig 8. Normalized On-Resistance vs. Temperature
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
DS
= 15V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 32A
V
GS
= 10V
V
GS
= 4.5V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 50 100 150 200
I
D
, Drain Current (A)
0
1
2
3
4
5
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
6
Fig 14. Typical Threshold Voltage vs. Junction
Temperature
Fig 13. Maximum Drain Current vs. Case Temperature
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
Fig 15. Maximum Avalanche Energy vs. Drain Current
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, Source-to-Drain Voltage (V)
0
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
GS
= 0V
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
T
y
p
i
c
a
l
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 100µA
I
D
= 150µA
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
1200
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 2.7A
3.9A
BOTTOM 25A
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
40
80
120
160
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
0 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
P1-P3P4-P6P7-P9P10-P10

IRF8301MTRPBF

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Buy IRF8301MTRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSF N CH 30V 34A DIRECTFET MT
Lifecycle:
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