2003 Mar 18 2
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
FEATURES
• Collector current capability I
C
= −200 mA
• Collector-emitter voltage V
CEO
= −40 V.
APPLICATIONS
• General switching and amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN
complement: MMBT3904.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER MARKING CODE
(1)
MMBT3906 7B∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
C
collector current (DC) −200 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −40 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −6 V
I
C
collector current (DC) − −200 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
