2003 Mar 18 3
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − −50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −6 V − −50 nA
h
FE
DC current gain V
CE
= −1 V; see Fig.2
I
C
= −0.1 mA 60 −
I
C
= −1 mA 80 −
I
C
= −10 mA 100 300
I
C
= −50 mA 60 −
I
C
= −100 mA 30 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −1 mA − −250 mV
I
C
= −50 mA; I
B
= −5 mA − −400 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −1 mA − −850 mV
I
C
= −50 mA; I
B
= −5 mA − −950 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −5 V; f = 1 MHz − 4.5 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= −500 mV;
f
= 1 MHz
− 10 pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −20 V;
f
= 100 MHz
250 − MHz
F noise figure I
C
= −100 µA; V
CE
= −5 V;
R
S
= 1 kΩ; f = 10 Hz to 15.7 kHz
− 4 dB
Switching times (between 10% and 90% levels); see Fig.7
t
d
delay time I
Con
= −10 mA; I
Bon
= −1 mA;
I
Boff
= 1 mA
− 35 ns
t
r
rise time − 35 ns
t
s
storage time − 225 ns
t
f
fall time − 75 ns
