IRG7PH30K10PbF
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200µH, R
G
= 51Ω.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 250µA
CT6
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —1.27—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C) CT6
— 2.05 2.35
I
C
= 9.0A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.56 — V
I
C
= 9.0A, V
GE
= 15V, T
J
= 150°C
8,9,10
—2.65—
I
C
= 9.0A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 5.0 — 7.5 V
V
CE
= V
GE
, I
C
= 400µA
8,9
∆
V
GE(th)
/
∆
TJ
Threshold Voltage temp. coefficient — -16 — mV/°C
V
CE
= V
GE
, I
C
= 400µA (25°C - 175°C)
10,11
gfe Forward Transconductance — 6.2 — S
V
CE
= 50V, I
C
= 9.0A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 1.0 25
V
GE
= 0V, V
CE
= 1200V
—400—
V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 45 68
I
C
= 9.0A
18
Q
ge
Gate-to-Emitter Charge (turn-on) — 8.7 13 nC
V
GE
= 15V CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 20 30
V
CC
= 600V
E
on
Turn-On Switching Loss — 530 760
I
C
= 9.0A, V
CC
= 600V, V
GE
= 15V CT4
E
off
Turn-Off Switching Loss — 380 600 µJ
R
G
= 22Ω, L = 1000µH, L
S
= 150nH,T
J
= 25°C
E
total
Total Switching Loss — 910 1360
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 14 31
I
C
= 9.0A, V
CC
= 600V, V
GE
= 15V
CT4
t
r
Rise time — 24 41 ns
R
G
= 22
Ω
, L = 1000µH, L
S
= 150nH,T
J
= 25°C
t
d(off)
Turn-Off delay time — 110 130
t
f
Fall time — 38 56
E
on
Turn-On Switching Loss — 850 —
I
C
= 9.0A, V
CC
= 600V, V
GE
=15V
12,14
E
off
Turn-Off Switching Loss — 750 — µJ
R
G
=22
Ω
, L=1000µH, L
S
=150nH, T
J
= 175°C CT4
E
total
Total Switching Loss — 1600 —
Energy losses include tail & diode reverse recovery WF1, WF2
t
d(on)
Turn-On delay time — 12 —
I
C
= 9.0A, V
CC
= 600V, V
GE
=15V 13,15
t
r
Rise time — 23 — ns
R
G
= 22Ω, L = 1000µH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time — 130 —
T
J
= 175°C WF1
t
f
Fall time — 270 —
WF2
C
ies
Input Capacitance — 1070 — pF
V
GE
= 0V 17
C
oes
Output Capacitance — 63 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 26 — f = 1.0Mhz
T
J
= 175°C, I
C
= 36A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp =1200V
CT2
Rg = 10Ω, V
GE
= +20V to 0V, T
J
=175°C
SCSOA Short Circuit Safe Operating Area 10 — — µs
V
CC
= 600V, Vp =1200V ,T
J
= 150°C, 16, CT3
Rg = 22Ω, V
GE
= +15V to 0V
WF4
Conditions
µA
