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IRG7PH30K10PBF

P1-P3P4-P6P7-P9
IRG7PH30K10PbF
4 www.irf.com
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= -40°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
V
C
E
(
V
)
I
CE
= 4.5A
I
CE
= 9.0A
I
CE
= 18A
0 2 4 6 8 10 12 14 16 18
V
CE
(V)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
V
C
E
(
V
)
I
CE
= 4.5A
I
CE
= 9.0A
I
CE
= 18A
Fig. 12 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1000µH; V
CE
= 600V, R
G
= 22Ω; V
GE
= 15V
Fig. 11- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
0 5 10 15
V
GE
(V)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
T
J
= 25°C
T
J
= 175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
V
C
E
(
V
)
I
CE
= 4.5A
I
CE
= 9.0A
I
CE
= 18A
5 101520
I
C
(A)
0
400
800
1200
1600
2000
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
IRG7PH30K10PbF
www.irf.com 5
Fig. 13 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 1000µH; V
CE
= 600V, R
G
= 22Ω; V
GE
= 15V
Fig. 14 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1000µH; V
CE
= 600V, I
CE
= 9.0A; V
GE
= 15V
Fig. 15 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 1000µH; V
CE
= 600V, I
CE
= 9.0A; V
GE
= 15V
Fig. 16 - V
GE
vs. Short Circuit Time
V
CC
= 600V; T
C
= 150°C
8 10121416
V
GE
(V)
8
16
24
32
40
48
T
i
m
e
(
µ
s
)
10
20
30
40
50
60
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
Fig. 17 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 18- Typical Gate Charge
vs. V
GE
I
CE
= 9.0A; L = 1.0mH
0 1020304050
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 600V
V
CES
= 400V
0 100 200 300 400 500
V
CE
(V)
1
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 10 20 30 40 50
R
G
(Ω)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 10 20 30 40 50
R
G
(Ω)
600
700
800
900
1000
E
n
e
r
g
y
(
µ
J
)
E
ON
E
OFF
0 5 10 15 20
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
IRG7PH30K10PbF
6 www.irf.com
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.01068 0.000005
0.18156 0.000099
0.31802 0.001305
0.19105 0.009113
P1-P3P4-P6P7-P9

IRG7PH30K10PBF

Mfr. #:
Buy IRG7PH30K10PBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors Trnch IGBT 1200V 10A single IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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