OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STTA812D

P1-P3P4-P6P7-P9P10-P10
1/10
TURBOSWITCH is a trademark of STMicroelectronics.
May 2002 - Ed: 5C
■
ULTRA-FAST, SOFT RECOVERY.
■
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
■ HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
■ HIGH REVERSE VOLTAGE CAPABILITY
■
INSULATED PACKAGE : TO-220AC Ins.
Electrical insulation : 2500V
RMS
Capacitance : 7pF.
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all “freewheel
mode” operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
I
F(AV)
8A
V
RRM
1200V
t
rr
(typ) 50ns
V
F
(max) 2.0V
MAIN PRODUCT CHARACTERISTICS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
V
RSM
Non repetitive peak reverse voltage 1200 V
I
F(RMS)
RMS forward current TO-220AC/ D
2
PAK 30 A
TO-220AC Ins. 20 A
I
FRM
Repetitive peak forward current tp = 5 µs F = 5kHz square 110 A
I
FSM
Surge non repetitive forward current tp = 10ms sinusoidal 70 A
T
stg
Storage temperature range - 65 to + 150 °C
T
j
Maximum operating junction temperature 150 °C
ABSOLUTE RATINGS (limiting values)
STTA812D/DI/G
®
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
K
K
A
TO-220AC
STTA812D
K
A
TO-220AC Ins.
STTA812DI
NC
K
A
D
2
PAK
STTA812G
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STTA812D/DI/G
2/10
Symbol Parameter Test conditions Min Typ Max Unit
V
F*
Forward voltage drop I
F
=8A Tj = 25°C
Tj = 125°C
1.35
2.2
2.0
V
V
I
R**
Reverse leakage current V
R
=0.8 x
V
RRM
Tj = 25°C
Tj = 125°C
0.6
100
4
µA
mA
Vto Threshold voltage Ip < 3.I
AV
Tj = 125°C 1.57 V
rd Dynamic parameter 54 mΩ
Test pulses : * tp = 380 µs, δ <2%
**tp=5ms ,δ<2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Value Unit
R
th(j-c)
Junction to case thermal
resistance
TO-220AC/D
2
PAK
TO-220AC Ins.
2.3
3.3
°C/W
P
1
Conduction power dissipation
I
F(AV)
=8A δ=0.5
TO-220AC/D
2
PAK
TO-220AC Ins.
Tc= 105°C
Tc= 85°C
19.5 W
P
max
Total power dissipation
Pmax=P1+P3 (P3=10%
P1)
TO-220AC/D
2
PAK
TO-220AC Ins.
Tc= 100°C
Tc= 79°C
21.5 W
THERMAL AND POWER DATA
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
Reverse recovery
time
Tj = 25°C
I
F
= 0.5 A I
R
= 1A Irr = 0.25A
I
F
=1A dI
F
/dt =-50A/µsV
R
=30V
50
100
ns
I
RM
Maximum reverse
recovery current
Tj = 125°C VR = 600V I
F
=8A
dI
F
/dt = -64 A/µs
dI
F
/dt = -500 A/µs
25
12
A
S factor Softness factor Tj = 125°C V
R
= 600V I
F
=8A
dI
F
/dt = -500 A/µs
1.2
-
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol Parameter Test conditions Min Typ Max Unit
t
fr
Forward recovery time Tj = 25°C
I
F
=8 A, dI
F
/dt=64A/µs
measured at 1.1
×
V
F
max
900
ns
V
Fp
Peak forward voltage Tj = 25°C
I
F
=8A, dI
F
/dt=64A/µs
I
F
=40A, dI
F
/dt = 500 A/µs
45
35
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P=V
to
xI
F(AV)
+rdxI
F
2
(RMS)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STTA812D/DI/G
3/10
0246810
0
2
4
6
8
10
12
14
16
18
20
IF(av) (A)
P1(W)
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
Fig. 1: Conductionlosses versus average current.
0.0 1.0 2.0 3.0 4.0 5.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125°C
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0 100 200 300 400 500
0
50
100
150
200
250
300
350
400
450
500
550
dIF/dt(A/µs)
trr(ns)
VR=600V
Tj=125°C
IF=2*IF(av)
IF=0.5*IF(av)
IF=IF(av)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence).
0 100 200 300 400 500
0.80
1.00
1.20
1.40
S factor
VR=600V
IF<2*IF(av)
Tj=125°C
dIF/dt(A/µs)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values).
0 100 200 300 400 500
0
10
20
30
40
50
dIF/dt(A/µs)
IRM(A)
VR=600V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4: Peak reverse recovery current versus
dI
F
/dt (90% confidence).
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P10

STTA812D

Mfr. #:
Buy STTA812D
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 1.2KV 8A TO220AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet