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STTA812D

P1-P3P4-P6P7-P9P10-P10
Obsolete Product(s) - Obsolete Product(s)
STTA812D/DI/G
4/10
25 50 75 100 125
0.7
0.8
0.9
1.0
1.1
Tj(°C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
0 100 200 300 400 500
0
10
20
30
40
50
60
70
VFP(V)
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
Fig.8: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
0 100 200 300 400 500
100
200
300
400
500
600
tfr(ns)
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence).
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STTA812D/DI/G
5/10
Fig. A: “FREEWHEEL” MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses isgiven below :
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F=1/T =t/T
V
R
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STTA812D/DI/G
6/10
I
I
F
Rd
I
R
V
R
V
tO
V
F
V
Fig. E: STATIC CHARACTERISTICS
Conduction losses :
P1=V
t0
.I
F(AV)
+R
d
.I
F
2
(RMS)
Reverse losses :
P2=V
R
.I
R
.(1-δ)
t
T
F = 1/T = t/T
PWM
Fig. B: SNUBBER DIODE. Fig. C: DEMAGNETIZING DIODE.
Fig. D: RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES .
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P10

STTA812D

Mfr. #:
Buy STTA812D
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 1.2KV 8A TO220AC
Lifecycle:
New from this manufacturer.
Delivery:
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