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Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4910DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
40 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
37
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
- 5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 2.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 16 V
100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
µA
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 6 A
0.022 0.027
Ω
V
GS
= 4.5 V, I
D
= 4.8 A
0.026 0.032
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6 A
20 S
Dynamic
a
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V, I
D
= 1 MHz
855
pFOutput Capacitance
C
oss
105
Reverse Transfer Capacitance
C
rss
65
Total Gate Charge
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
21 32
nC
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5 A
9.6 14.5
Gate-Source Charge
Q
gs
2.3
Gate-Drain Charge
Q
gd
3.2
Gate Resistance
R
g
f = 1 MHz 2.5 3.8
Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 20 V, R
L
= 4 Ω
I
D
≅ 5 A, V
GEN
= 10 V, R
g
= 1 Ω
612
ns
Rise Time
t
r
11 20
Turn-Off Delay Time
t
d(off)
24 36
Fall Time
t
f
612
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 20 V, R
L
=4 Ω
I
D
≅ 5 A, V
GEN
= 4.5 V, R
g
= 1 Ω
12 20
Rise Time
t
r
60 90
Turn-Off Delay Time
t
d(off)
22 33
Fall Time
t
f
510
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
2.6
A
Pulse Diode Forward Current
a
I
SM
20
Body Diode Voltage
V
SD
I
S
= 1.5 A
0.73 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
26 40 ns
Body Diode Reverse Recovery Charge
Q
rr
21 32 nC
Reverse Recovery Fall Time
t
a
13
ns
Reverse Recovery Rise Time
t
b
13
