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SI4910DY-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4910DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.001
0 0.2 0.4 0.6 0.8
V
SD
– Source-to-Drain Voltage (V)
– Source Current (A)I
S
T
J
= 25 C
T
J
= 150 C
0.1
0.01
1
10
100
- 0.
8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
– Temperature ( C)
V
GS(th)
Variance (V)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.03
0.06
0.09
0.12
0.15
012345678 910
V
GS
– Gate-to-Source Voltage (V)
R
DS(on)
– Drain-to-Source On-Resistance ( )
T
A
= 25 C
T
A
= 125 C
I
D
= 6 A
0
30
50
10
20
Power (W)
Time (s)
40
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
– Drain Current (A)I
D
0.1
V
DS
– Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)*
1 ms
10 ms
100 ms
1 s
10 s
0.1 1 10
10
T
A
= 25 C
Single Pulse
DC
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
5
Vishay Siliconix
Si4910DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 255075100125150
I
D
– Drain Current (A)
T
C
– Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
T
C
– Case Temperature (°C)
Power Dissipation (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
– Ambient Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4910DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73699
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
P1-P3P4-P6P7-P7

SI4910DY-T1-E3

Mfr. #:
Buy SI4910DY-T1-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET DUAL N-CH 40V(D-S)
Lifecycle:
New from this manufacturer.
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