OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MC74LVX50DR2

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 5
1 Publication Order Number:
MC74LVX50/D
MC74LVX50
Hex Buffer
The MC74LVX50 is an advanced high speed CMOS buffer
fabricated with silicon gate CMOS technology.
The internal circuit is composed of three stages, including a buffered
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
• High Speed: t
PD
= 4.1 ns (Typ) at V
CC
= 3.3 V
• Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
• High Noise Immunity: V
NIH
= V
NIL
= 28% V
CC
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Designed for 2.0 V to 3.6 V Operating Range
• Low Noise: V
OLP
= 0.5 V (Max)
• These Devices are Pb−Free and are RoHS Compliant
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
A1
Y
1
1
A2
Y
2
1
A3
Y
3
1
A4
Y
4
1
A5
Y
5
1
A6
Y
6
1
Figure 1. Logic Diagram Figure 2. Logic Symbol
Y = A
FUNCTION TABLE
L
H
A Input Y Output
L
H
See detailed ordering and shipping information in the packag
e
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAMS
TSSOP−14
DT SUFFIX
CASE 948G
SOIC−14 NB
D SUFFIX
CASE 751A
LVX50G
AWLYWW
1
14
LVX
50
ALYWG
G
1
14
LVX50 = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
TSSOP−14
SOIC−14 NB
PIN ASSIGNMENT
14−Lead (Top View)
1314 12 11 10 9 8
21 34567
V
CC
A6 Y6 A5 Y5 A4 Y4
A1 Y1 A2 Y2 A3 Y3 GND
MC74LVX50
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to )7.0 V
V
IN
DC Input Voltage *0.5 to )7.0 V
V
OUT
DC Output Voltage *0.5 to V
CC
)0.5 V
I
IK
DC Input Diode Current V
I
< GND *20 mA
I
OK
DC Output Diode Current V
O
< GND ±20 mA
I
OUT
DC Output Sink Current ±25 mA
I
CC
DC Supply Current per Supply Pin ±50 mA
T
STG
Storage Temperature Range *65 to )150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260
_C
T
J
Junction Temperature under Bias )150
_C
q
JA
Thermal Resistance (Note 1)
SOIC
TSSOP
125
170
_C/W
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 30% − 35% UL 94−V0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
2000
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 85_C (Note 5)
±300 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Supply Voltage 2.0 3.6 V
V
I
Input Voltage (Note 6) 0 5.5 V
V
O
Output Voltage (HIGH or LOW State) 0 V
CC
V
T
A
Operating Free−Air Temperature *40 )85
_C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.0 V ±0.3 V 0 100 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.
NOTE: The q
JA
of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table
and figure below.
MC74LVX50
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Test Conditions
V
CC
(V)
T
A
= 25°C T
A
≤ 85°C
Unit
Min Typ Max Min Max
V
IH
High−Level Input Voltage 2.0
3.0
3.6
1.5
2.0
2.4
1.5
2.0
2.4
V
V
IL
Low−Level Input Voltage 2.0
3.0
3.6
0.5
0.8
0.8
0.5
0.8
0.8
V
V
OH
High−Level Output Voltage
(V
IN
= V
IH
or V
IL
)
I
OH
= −50 mA
I
OH
= −50 mA
I
OH
= −4 mA
2.0
3.0
3.0
1.9
2.9
2.58
2.0
3.0
1.9
2.9
2.48
V
V
OL
Low−Level Output Voltage
(V
IN
= V
IH
or V
IL
)
I
OL
= 50 mA
I
OL
= 50 mA
I
OL
= 4 mA
2.0
3.0
3.0
0.0
0.0
0.1
0.1
0.36
0.1
0.1
0.44
V
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to
3.6
±0.1 ±1.0
mA
I
CC
Quiescent Supply Current V
IN
= V
CC
or GND 3.6 2.0 20.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
≤ 85°C
Unit
Min Typ Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
Input A to Y
V
CC
= 2.7 V C
L
= 15 pF
C
L
= 50 pF
5.4
7.9
10.1
13.6
1.0
1.0
12.5
16.0
ns
V
CC
= 3.3 V ± 0.3 V C
L
= 15 pF
C
L
= 50 pF
4.1
6.6
6.2
9.7
1.0
1.0
7.5
11.5
t
OSHL
t
OSLH
Output−to−Output Skew
(Note 7)
V
CC
= 2.7 V C
L
= 50 pF 1.5 1.5
ns
V
CC
= 3.3 V ±0.3V C
L
= 50 pF 1.5 1.5
C
IN
Input Capacitance 4 10 10 pF
C
PD
Power Dissipation Capacitance (Note 8)
Typical @ 25°C, V
CC
= 3.3 V
pF
15
7. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t
OSHL
) or LOW−to−HIGH (t
OSLH
); parameter
guaranteed by design.
8. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 3.3 V
Symbo
l
Characteristic
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.3 0.5 V
V
OLV
Quiet Output Minimum Dynamic V
OL
−0.3 −0.5 V
V
IHD
Minimum High Level Dynamic Input Voltage 2.0 V
V
ILD
Maximum Low Level Dynamic Input Voltage 0.8 V
P1-P3P4-P6P7-P9

MC74LVX50DR2

Mfr. #:
Buy MC74LVX50DR2
Manufacturer:
ON Semiconductor
Description:
IC BUF NON-INVERT 3.6V 14SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet