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IRFML8244TRPBF

P1-P3P4-P6P7-P9P10-P10
02/29/12
IRFML8244TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRFML8244TRPbF
Load/ System Switch
Features and Benefits
V
DS
25 V
V
GS Max
± 20 V
R
DS(on) max
(@V
GS
= 10V)
24
m
R
DS(on) max
(@V
GS
= 4.5V)
41
m
Features
Benefits
Low R
DS(on)
(
24m
)
Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
Environmentally friendly
MSL1, Consumer qualification Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
––– 100
R
JA
Junction-to-Ambient (t<10s)
––– 99
1.25
0.80
24
W
°C/W
A
Max.
5.8
4.6
-55 to + 150
± 20
0.01
25
PD - 97587A
IRFML8244TRPbF
2 www.irf.com
D
S
G
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
––– 20 24
––– 32 41
V
GS(th)
Gate Threshold Voltage 1.35 1.7 2.35 V
I
DSS
––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 1.6 –––
gfs Forward Transconductance 10 ––– ––– S
Q
g
Total Gate Charge ––– 5.4 –––
Q
gs
Gate-to-Source Charge ––– 1.0 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 0.81 –––
t
d(on)
Turn-On Delay Time ––– 2.7 –––
t
r
Rise Time ––– 2.1 –––
t
d(off)
Turn-Off Delay Time ––– 9.0 –––
t
f
Fall Time ––– 2.9 –––
C
iss
Input Capacitance ––– 430 –––
C
oss
Output Capacitance ––– 110 –––
C
rss
Reverse Transfer Capacitance ––– 49 –––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 11 17 ns
Q
rr
Reverse Recovery Charge ––– 4.2 6.3 nC
di/dt = 100A/μs
V
GS
= 20V
V
GS
= -20V
T
J
= 25°C, I
S
= 5.8A, V
GS
= 0V
integral reverse
p-n junction diode.
V
DS
= 10V, I
D
= 5.8A
I
D
= 5.8A
I
D
= 1.0A
T
J
= 25°C, V
R
= 20V, I
F
=5.8A
showing the
V
DS
=13V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
R
G
= 6.8
V
GS
= 10V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
MOSFET symbol
V
DS
= V
GS
, I
D
= 10μA
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
Drain-to-Source Leakage Current μA
V
DD
=13V
nA
nC
ns
pF
A
1.25
24
––– –––
––– –––
R
DS(on)
Static Drain-to-Source On-Resistance
m
V
GS
= 10V, I
D
=
5.8A
V
GS
= 4.5V, I
D
= 4.6A
IRFML8244TRPbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
BOTTOM 3.0V
60μs PULSE WIDTH
Tj = 25°C
3.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.0V
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
BOTTOM 3.0V
2.0 2.5 3.0 3.5 4.0 4.5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 5.8A
V
GS
= 10V
P1-P3P4-P6P7-P9P10-P10

IRFML8244TRPBF

Mfr. #:
Buy IRFML8244TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg
Lifecycle:
New from this manufacturer.
Delivery:
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