Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRFML8244TRPBF
P1-P3
P4-P6
P7-P9
P10-P10
IRFML8244TRPbF
4
www.irf.com
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
012345678
Q
G
,
Tot
al Gat
e Charge (nC
)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 20V
V
DS
= 13V
V
DS
= 5.
0V
I
D
= 5.
8A
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, S
ource-to-
Drai
n Volt
age (V)
0.1
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 150°
C
V
GS
= 0V
0.10
1.
0
10
100
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
T
A
= 25°
C
Tj
= 150°
C
Si
ngle Pul
se
100
μ
sec
1msec
10msec
IRFML8244TRPbF
www.irf.com
5
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 10a.
Switching Time Test Circuit
V
DS
Pulse Width
µs
Duty Factor
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25
50
75
100
125
150
T
A
, A
mbient T
emperat
ure (
°C
)
0
1
2
3
4
5
6
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-
006
1E-
005
0.0001
0.001
0.01
0.1
1
10
t
1
, R
ectangular
Pul
se Durati
on (sec)
0.001
0.01
0.1
1
10
100
1000
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty
Fac
tor
D = t1/t2
2. P
eak Tj =
P dm x Z
thj
a + T
A
IRFML8244TRPbF
6
www.irf.com
Fig 13.
Typical On-Resistance vs. Drain
Current
Fig 12.
Typical On-Resistance vs. Gate
Voltage
Fig 14b.
Gate Charge Test Circuit
Fig 14a.
Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
V
GS
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
2
4
6
8
10
12
14
16
18
20
V
GS,
Gat
e -t
o -Source V
oltage (
V)
0
10
20
30
40
50
60
70
80
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 5.
8A
T
J
= 25°
C
T
J
= 125°
C
0
5
10
15
20
25
I
D
, D
rain Cur
rent (
A)
0
5
10
15
20
25
30
35
40
45
50
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
Vgs =
4.5V
Vgs =
10V
P1-P3
P4-P6
P7-P9
P10-P10
IRFML8244TRPBF
Mfr. #:
Buy IRFML8244TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRFML8244TRPBF