3
ATF-551M4 Electrical Speci cations
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vgs
Operational Gate Voltage Vds = 2.7V, Ids = 10 mA V 0.3 0.47 0.65
Vth
Threshold Voltage Vds = 2.7V, Ids = 2 mA V 0.18 0.37 0.53
Idss
Saturated Drain Current Vds = 2.7V, Vgs = 0V μA — 0.1 3
Gm
Transconductance Vds = 2.7V, gm = Idss/Vgs; mmho 110 220 285
Vgs = 0.75 –0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -2.7V μA — — 95
NF Noise Figure
[1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.5 0.9
Vds = 3V, Ids = 20 mA dB — 0.5 —
Gain Gain
[1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA dB 15.5 17.5 18.5
Vds = 3V, Ids = 20 mA dB — 18.0 —
OIP3
Output 3
rd
Order f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm 22 24.1 —
Intercept Point
[1]
Vds = 3V, Ids = 20 mA dBm — 30.0 —
P1dB
1dB Compressed f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.6 —
Output Power
[1]
Vds = 3V, Ids = 20 mA dBm — 16.0 —
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts
from 4 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-
o between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded
from actual measurements.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Fmin Minimum Noise Figure
[2]
f = 900 MHz Vds = 2.7V, Ids = 10 mA dB — 0.27 —
f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.41 —
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dB — 0.61 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dB — 0.88 —
Ga Associated Gain
[2]
f = 900 MHz Vds = 2.7V, Ids = 10 mA dB — 21.8 —
f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 17.9 —
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dB — 14.2 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dB — 12.0 —
OIP3
Output 3
rd
Order f = 900 MHz Vds = 2.7V, Ids = 10 mA dBm — 22.1 —
Intercept Point
[3]
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dBm — 24.3 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dBm — 24.5 —
P1dB
1dB Compressed f = 900 MHz Vds = 2.7V, Ids = 10 mA dBm — 14.3 —
Output Power
[3]
f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.5 —
f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.3 —
Notes:
2. The Fmin values are based on a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at
the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
ATF-551M4 Electrical Speci cations (see notes 2 and 3, as indicated)
Input
50 Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.3
Γ_ang = 11
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.3
Γ_ang = 9
(0.9 dB loss)
DUT
50 Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
