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TS110-8A2-AP

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
October 2014 DocID026589 Rev 1 1/10
TS110-8
High surge voltage 1.25 A SCR for circuit breaker
Datasheet - production data
Features
• On-state rms current, 1.25 A
• Repetitive peak off-state voltage, 800 V
• Non-repetitive direct surge peak off-state
voltage, 1250 V
• Non-repetitive reverse surge peak off-state
voltage, 900 V
• Triggering gate current, 100 µA
• High off-state immunity: 200 V/µs
• ECOPACK
®
2 compliant component
Applications
• GFCI (Ground Fault Circuit Interrupter)
• AFCI (Arc Fault Circuit Interrupter)
• RCD (Residual Current Device)
• RCBO (Residual Current circuit Breaker with
Overload protection)
• AFDD (Arc Fault Detection Device)
Description
Thanks to highly sensitive triggering levels, the
TS110-8 series is suitable for circuit breaker
applications where the available gate current is
limited.
The 1250 V direct surge voltage capability of the
TS110-8 enables high robustness of the whole
circuit breaker. The low leakage current of the
TS110-8 reduces power consumption over the
entire lifetime of the circuit breaker. The high
off-state immunity (200 V/µs) insures the non
tripping of the breaker in case of electrical fast
transient (EFT) on the mains.
The TS110-8 is available in through-hole TO-92
package with GAK and KGA pinout and in
SMBflat-3L package.
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Table 1. Device summary
Symbol Value Unit
I
T(RMS)
1.25 A
V
DRM
, V
RRM
800 V
V
DSm
, V
RSM
1250, 900 V
I
GT
100 µA
T
j
125 °C
www.st.com
Characteristics TS110-8
2/10 DocID026589 Rev 1
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180° conduction angle)
TO-92 T
l
= 53 °C
1.25 A
SMBflat-3L T
c
= 109 °C
IT
(AV)
Average on-state current
(180° conduction angle)
TO-92 T
I
= 53 °C
0.8 A
SMBflat-3L T
c
= 109 °C
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j initial
= 25 °C
21
A
t
p
= 10 ms 20
1st step: one surge every 5 seconds, 25 surges
2nd step: one surge every 5 seconds, 25 surges
t
p
= 10 ms T
amb
= 90 °C
25 times 12 A
25 times 16 A
I
²
tI
²
t Value for fusing t
p
= 10 ms, 25 °C 2 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 50 Hz, 125 °C 100
A/µs
Non repetitive critical current rate of rise at break-over, see Figure 17, V
D
> V
DSm
200
V
DRM
,
V
RRM
Repetitive peak off-state AC voltage, R
GK
= 220 Ω T
j
= 125 °C 800 V
V
DSm
Non-repetitive direct surge peak off-state voltage,
R
GK
= 220 Ω
t
p
= 10 ms T
j
= 25 °C 1250 V
V
RSM
Non-repetitive reverse surge peak off-state
voltage, R
GK
= 220 Ω
t
p
= 10 ms T
j
= 25 °C 900 V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 1.2 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.2 W
T
stg
Storage junction temperature range - 40 to + 150
°C
T
j
Operating junction temperature range - 40 to + 125
Table 3. Electrical characteristics
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 140Ω T
j
= 25 °C
Min. 1
µA
Max. 100
V
GT
Max. 0.8 V
V
GD
V
D
= V
DRM
, R
L
= 33 kΩ, R
GK
= 220 Ω T
j
= 125 °C Min. 0.1 V
V
RG
I
RG
= 2 mA T
j
= 25 °C Min. 7.5 V
I
H
I
T
= 50 mA, R
GK
= 220 Ω T
j
= 25 °C Max. 12 mA
I
L
I
G
= 5 mA, R
GK
= 220 Ω T
j
= 25 °C Max. 12 mA
dV/dt V
D
= 67% V
DRM,
R
GK
= 220 Ω T
j
= 125 °C Min. 200 V/µs
DocID026589 Rev 1 3/10
TS110-8 Characteristics
10
Table 4. Static electrical characteristics
Symbol Test conditions Value Unit
V
TM
I
TM
= 2.5 A, t
p
= 380 µs T
j
= 25 °C Max. 1.6 V
V
T0
Threshold voltage T
j
= 125 °C Max. 0.95 V
R
D
Dynamic resistance T
j
= 125 °C Max. 220 mΩ
I
DRM
I
RRM
V
D
= V
DRM
/ V
RRM
, R
GK
= 220 Ω
T
j
= 25 °C
Max.
1µA
T
j
= 125 °C 100 µA
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads (DC) TO-92 65
°C/WR
th(j-a)
Junction to ambient (DC)
TO-92 160
S = 5 cm
2
SMBflat-3L 75
R
th(j-c)
Junction to case (DC) SMBflat-3L 14
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Average and DC on-state current
versus lead temperature (TO-92)
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Figure 3. Average and DC on-state current
versus case temperature (SMBflat-3L)
Figure 4. Average and DC on-state current
versus ambient temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 25 50 75 100 125
SMBflat-3L
I (A)
T(AV)
a = 30°, 60°, 90°, 120°, 180°, DC
T (°C)
c
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P1-P3P4-P6P7-P9P10-P10

TS110-8A2-AP

Mfr. #:
Buy TS110-8A2-AP
Manufacturer:
STMicroelectronics
Description:
SCRs High surge voltage 1.25 A SCR for circuit breaker
Lifecycle:
New from this manufacturer.
Delivery:
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