TS110-8A2-AP

Characteristics TS110-8
4/10 DocID026589 Rev 1
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 6. Typical thermal resistance junction to
ambient versus copper surface under anode
(epoxy FR4, Cu
th
= 35 µm)
0.01
0.10
1.00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
TO-92
SMBflat-3L
Copper surface
area = 5cm²
T()
p
s
K = [Z /R ]
th(j-a) th(j-a)
5
WKMD
&:
60%IODW/
6
FX
FPð




Figure 7. Relative variation of gate trigger
current and trigger voltage versus junction
temperature (typical values)
Figure 8. Relative variation of latching and
holding current versus junction temperature
(typical values)
,
*7
9
*7
7
M
&
,
*7
>7
M
@,
*7
>7
M
 &@
9
*7
>7
M
@9
*7
>7
M
 &@





      



,
+
DQG,
/

7
M
&
,
+
,
/
>7
M
@,
+
,
/
>7
M
 &@












       
Figure 9. Relative variation of holding current
versus gate-cathode resistance (typical values)
Figure 10. Relative variation of dV/dt immunity
versus junction temperature (typical values)
0.0
0.5
1.0
1.5
2.0
2.5
1.E-01 1.E+00 1.E+01
RK
GK
()Ω
I [ ] / I [ = 2 ]
HH
R
GK
R
GK
20 Ω
DocID026589 Rev 1 5/10
TS110-8 Characteristics
10
Figure 15. Non repetitive surge peak on-state current
Figure 11. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
Figure 12. Relative variation of dV/dt immunity
versus gate-cathode capacitor (typical values)
0.10
1.00
10.00
100 200 300 400 500 600 700
R
GK
()Ω
dV/d R dV/d R 220
t
GK
t
GK
[]
/[=]
Ω
VV
D
= 0.67 X
DRM
j
= 125 °C
T
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.5 1.0 1.5 2.0
C
GK
()nF
dV/d C dV/d C 100
t
GK
t
GK
[]
/[= ]
pF
VV
D
= 0.67 X
DRM
j
= 125 °C
T
R 220
GK
= Ω
Figure 13. On-state characteristics (maximum
values)
Figure 14. Surge peak on-state current versus
number of cycles
0.1
1.0
10.0
100.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T
j
= 125 °C
T
j
= 25 °C
V
TM
()V
I
TM
()A
j
= 125 °C
T
= 0V
to
.95 V
R
d
220 m= Ω









  
1RQUHSHWLWLYH7
M
 &
1XPEHURIF\FOHV
,
760
$
72UHSHWLWLYH7
D
 &
W PV
S
2QHF\FOH
60%IODW/UHSHWLWLYH7
D
 &


   
,
760
W
S
PV
,
760
$
7
M
LQLWLDO &
)RUDVLQXVRLGDOSXOVHZLWKZLGWKPV
AC line transient voltage ruggedness TS110-8
6/10 DocID026589 Rev 1
2 AC line transient voltage ruggedness
In comparison with standard SCRs, the TS110-8 is self-protected against over-voltage. The
TS110-8 switch can safely withstand AC line direct surge voltages by switching to the on
state (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The
load limits the current through the TS110-8. The self-protection against over-voltage is
based on an overvoltage crowbar technology. This safety feature works even with high
turn-on current ramp up.
Figure 16 represents the TS110-8 in a test environment. It is used to stress the TS110-8
switch according to the IEC 61000-4-5 standard conditions. The TS110-8 folds back safely
to the on state as shown in Figure 17.
The TS110-8 recovers its blocking voltage capability after the direct surge and the next zero
current crossing. Such a non repetitive test can be done at least 10 times.
Figure 16. Overvoltage ruggedness test circuit for IEC 61000-4-5 standards
Figure 17. Typical current and voltage waveforms across the TS110-8 during
IEC 61000-4-5 standard test
$&0DLQV
5
5
)LOWHULQJXQLW
0RGHORIWKHORDG
6XUJHJHQHUDWRU
ȍ ȍ
ȍ
&
,1
Q)
Q)
76
,
7
9
7
/ +
,
9
9
SHDN
9
'6P
VYROWDJHVXUJH
,
SHDN
 $
G,GW $V

TS110-8A2-AP

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
SCRs High surge voltage 1.25 A SCR for circuit breaker
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet